Leonid Dorf

Influence of inhomogeneous magnetic field on the characteristics of very high frequency capacitively coupled plasmas

The effect of inhomogeneous magnetic field on the spatial structure of very high frequency (VHF) plasmas is investigated for different coil configurations, gas pressures, high frequency bias powers, and degrees of electronegativity. The simulation results show that the electron density peaks in the center of the chamber for VHF plasmas due to the standing electromagnetic wave effect. On application of a magnetic field, the density increases near the wafer edge and decreases at the chamber center. The radial magnetic field component is found to limit electron loss to the electrodes and locally enhance the electron density. The axial magnetic field component limits plasma diffusion in the radial direction helping preserve the effect of improved electron confinement by the radial magnetic field. The peak electron density decreases with increasing magnetic field as the plasma moves toward the electrode edge occupying a larger volume. The effect of magnetic field becomes weaker at higher pressure due to the in...

Atomic precision etch using a low-electron temperature plasma

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Race Track Formation in a Magnetically Enhanced Hollow Cathode Electron Source

Immersing a hollow cathode into a magnetic field enhances trapping of fast cathode electrons and ionization, providing ~30% decrease in the discharge voltage for a given current. The nonuniform magnetic field in our electron source causes an intricate visual phenomenon-formation of bright plasma cords (race tracks) near two opposite walls, in a region, where the field component parallel to the walls is the strongest.