Lesheng Li

Site-Selective Passivation of Defects in NiO Solar Photocathodes by Targeted Atomic Deposition

For nanomaterials, surface chemistry can dictate fundamental material properties, including charge-carrier lifetimes, doping levels, and electrical mobilities. In devices, surface defects are usually the key limiting factor for performance, particularly in solar-energy applications. Here, we develop a strategy to uniformly and selectively passivate defect sites in semiconductor nanomaterials using a vapor-phase process termed targeted atomic deposition (TAD). Because defects often consist of atomic vacancies and dangling bonds with heightened reactivity, we observe-for the widely used p-type cathode nickel oxide-that a volatile precursor such as trimethylaluminum can undergo a kinetically limited selective reaction with these sites. The TAD process eliminates all measurable defects in NiO, leading to a nearly 3-fold improvement in the performance of dye-sensitized solar cells. Our results suggest that TAD could be implemented with a range of vapor-phase precursors and be developed into a general strategy to passivate defects in zero-, one-, and two-dimensional nanomaterials.

Excited Electron Dynamics at Semiconductor–Molecule Type-II Heterojunction Interface: First-Principles Dynamics Simulation

Excited electron dynamics at semiconductor-molecule interfaces is ubiquitous in various energy conversion technologies. However, a quantitative understanding of how molecular details influence the quantum dynamics of excited electrons remains a great scientific challenge because of the complex interplay of different processes with various time scales. Here, we employ first-principles electron dynamics simulations to investigate how molecular features govern the dynamics in a representative interface between the hydrogen-terminated Si(111) surface and a cyanidin molecule. Hot electron transfer to the chemisorbed molecule was observed but was short-lived on the molecule. Interfacial electron transfer to the chemisorbed molecule was found to be largely decoupled from hot electron relaxation within the semiconductor surface. While the hot electron relaxation was found to take place on a time scale of several hundred femtoseconds, the subsequent interfacial electron transfer was slower by an order of magnitude. At the same time, this secondary process of picosecond electron transfer is comparable in time scale to typical electron trapping into defect states in the energy gap.

Modeling time-coincident ultrafast electron transfer and solvation processes at molecule-semiconductor interfaces

Kinetic models based on Fermis Golden Rule are commonly employed to understand photoinduced electron transfer dynamics at molecule-semiconductor interfaces. Implicit in such second-order perturbative descriptions is the assumption that nuclear relaxation of the photoexcited electron donor is fast compared to electron injection into the semiconductor. This approximation breaks down in systems where electron transfer transitions occur on 100-fs time scale. Here, we present a fourth-order perturbative model that captures the interplay between time-coincident electron transfer and nuclear relaxation processes initiated by light absorption. The model consists of a fairly small number of parameters, which can be derived from standard spectroscopic measurements (e.g., linear absorbance, fluorescence) and/or first-principles electronic structure calculations. Insights provided by the model are illustrated for a two-level donor molecule coupled to both (i) a single acceptor level and (ii) a density of states (DOS) calculated for TiO2 using a first-principles electronic structure theory. These numerical calculations show that second-order kinetic theories fail to capture basic physical effects when the DOS exhibits narrow maxima near the energy of the molecular excited state. Overall, we conclude that the present fourth-order rate formula constitutes a rigorous and intuitive framework for understanding photoinduced electron transfer dynamics that occur on the 100-fs time scale.

Examining the Effect of Exchange-Correlation Approximations in First-Principles Dynamics Simulation of Interfacial Charge Transfer

We examine the extent to which the exchange-correlation (XC) approximation influences modeling interfacial charge transfer using fewest-switches surface hopping (FSSH) simulations within the single-particle description. A heterogeneous interface between a lithium ion and an extended boron-nitride sheet was considered here, being an extreme case in which wave function localization and energy level alignments are highly sensitive to the XC approximation. The PBE0 hybrid XC approximation yields nonadiabatic couplings (NACs) that are significantly smaller than the values obtained from the PBE-GGA approximation by an order of magnitude for localized electronic states. This difference between the two XC functionals for the calculated NACs was found to derive mainly from the wave function characteristics rather than from the lattice movement although first-principles molecular dynamics trajectories, along which NACs are obtained, differ noticeably between the two XC functionals. Using the NACs and single-particle energy level alignments at different levels of theory, FSSH simulations were performed to model the electron transfer dynamics at the interface. The electron transfer time scale was found to vary as much as, but not more than, 1 order of magnitude. The time scale was found to be quite sensitive to both NACs and energy level alignments. While the order of magnitude consistency for the charge transfer rate is encouraging even for this rather extreme model of heterojunction interface, continued advancement in electronic structure methods is required for quantitatively accurate determination of the transfer rate.