Li Hongdong

Synthesizing of ZnO Micro/Nanostructures at Low Temperature with New Reducing Agents

Instead of the conventional graphite, new additional reducing agents (diamond, silicon, metal elements, etc.) have been mixed with zinc oxide (ZnO) powder to fabricate ZnO micro/nanostructures by a thermal vapour transport method. Due to the strong reducibility for those additions, the corresponding heating temperature is decreased by 100-500° C compared to the case of graphite, which subsequently decreases the corresponding growth temperature for the products. Being placed separately for the powder sources of ZnO and addition, a vapour-vapour reduction-oxidation reaction mechanism between the sources is proposed as an important channel to fabricate ZnO. Photoluminescence and magnetic examinations indicate that the ZnO products synthesized have strong ultraviolet (visible) emissions and are room-temperature ferromagnetic, meaning that the products are available for applications.

High-Rate Growth and Nitrogen Distribution in Homoepitaxial Chemical Vapour Deposited Single-crystal Diamond

High rate (> 50 μm/h) growth of homoepitaxial single-crystal diamond (SCD) is carried out by microwave plasma chemical vapour deposition (MPCVD) with added nitrogen in the reactant gases of methane and hydrogen, using a polycrystalline-CVD-diamond-film-made seed holder. Photoluminescence results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale, either on the top surface or in the bulk of those as-grown SCDs. The presence of N-distribution is attributed to the facts: (i) a difference in N-incorporation efficiency and (ii) N-diffusion, resulting from the local growth temperatures changed during the high-rate deposition process. In addition, the formed nitrogen-vacancy centres play a crucial role in N-diffusion through the growing crystal. Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs. Finally, the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35–60% in the range 400–4000 cm−1.