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Publication
Featured researches published by Li Junhong.
Chinese Physics B | 2013
Zhai Yahong; Li Wei; Li Ping; Li Junhong; Hu Bin; Huo Wei-Rong; Fan Xue; Wang Gang
The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current?gate voltage (ID?VG) memory window of about 2.2 V is obtained at the sweep voltages of ?10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID?VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
Archive | 2016
Wang Kejie; Chen Yong; Zhang Huan; Yan Panpan; Ma Zhen; Li Junhong; Yao Qiangqiang; Hu Bin; Luo Xin
Archive | 2017
Luo Xin; Li Junhong; Hu Bin; Yao Qiangqiang; Jiang Youzhong; Li Haichao; Guo Mengyu; Liang Gaozhen; Yue Feilong
Archive | 2017
Hu Bin; Liang Gaozhen; Yue Feilong; Guo Mengyu; Luo Xin; Li Junhong; Li Haichao; Jiang Youzhong
Archive | 2017
Hu Bin; Yao Qiangqiang; Li Junhong; Luo Xin; Jiang Youzhong; Guo Mengyu; Liang Gaozhen; Li Haichao; Yue Feilong; Wang Kejie; Chen Yong; Zhang Huan; Ma Zhen
Archive | 2017
Li Junhong; Chen Yong; Wang Kejie; Hu Bin; Luo Xin; Ma Zhen; Yao Qiangqiang; Zhang Huan
Archive | 2017
Liang Gaozhen; Guo Mengyu; Hu Bin; Zhang Wei; Li Junhong; Deng Yong; An Ting
Archive | 2017
Hu Bin; Li Haichao; Luo Xin; Yao Qiangqiang; Li Junhong; Liang Gaozhen; Jiang Youzhong; Guo Mengyu; Yue Feilong
Archive | 2017
Li Junhong; Guo Mengyu; Hu Bin
Archive | 2017
Jin Jizhu; Li Junhong; Jin Rongxi; Lu Yong; Jin Gengtai; Piao Zhihao; Li Zhaoxian; Chen Xiuyu; Liu Chang; Zhan Zhu; Wang Jie
Collaboration
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