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Featured researches published by Li Weizhi.


Chinese Science Bulletin | 2008

Study on temperature characteristics of organic light-emitting diodes based on tris-(8-hydroxylquinoline)-aluminum

Suo Fan; Yu Junsheng; Li Weizhi; Lou Shuang-ling; Deng Jing; Jiang Yadong

Both single-layer and double-layer organic light-emitting devices based on tris-(8-hydroxylquinoline)-aluminum (Alq3) as emitter are fabricated by thermal vacuum deposition. The electroluminescent characteristics of these devices at various temperatures are measured, and the temperature characteristics of device performance are studied. The effect of temperature on device current conduction regime is analyzed in detail. The results show that the current-voltage (I-V) characteristics of devices are in good agreement with the theoretical prediction of trapped charge limited current (TCLC). In addition, both the charge carrier mobility and charge carrier concentration in the organic layer increase with the rise of temperature, which results in the monotonous increase of Alq3 device current. The current conduction mechanisms of two devices at different temperatures are identical, but the exponent m in current-voltage equation changes randomly with temperature. The device luminance increases slightly and the efficiency decreases monotonously due to the aging of Alq3 luminescent properties caused by high temperature. A tiny blue shift can be observed in the electroluminescent (EL) spectra as the temperature increases, and the reduction of device monochromaticity is caused by the intrinsic characteristics of organic semiconductor energy levels.


Optoelectronics Letters | 2007

Blue and green organic light-emitting devices with various film thicknesses for color tuning

Yu Junsheng; Suo Fan; Li Lu; Wang Tao; Li Weizhi; Jiang Yadong

Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO) /N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/aluminum(III) bis(2-methyl-8-quinolinato)4-phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.


Archive | 2014

Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof

Wang Jun; Jiang Yadong; Gou Jun; Wu Zhiming; Li Weizhi


Archive | 2013

Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film

Wang Jun; Gou Jun; Yang Ming; Yan Miao; Jiang Yadong; Li Weizhi


Archive | 2015

Pyroelectricity infrared detector

Liu Ziji; Liang Zhiqing; Wang Tao; Li Weizhi; Jiang Yadong


Archive | 2013

Method for testing film thermal conductivity

Li Weizhi; Wang Jun; Xu Jie; Jiang Yadong


Archive | 2013

Infrared-terahertz dual-band array detector microbridge structure and production method thereof

Gou Jun; Jiang Yadong; Zhang Huafu; Wang Jun; Li Weizhi


Archive | 2015

Pyroelectric infrared detector sensing unit and manufacturing method thereof

Liu Ziji; Liang Zhiqing; Wang Tao; Li Weizhi; Yu He; Wang Jun


Archive | 2015

Ultrathin metal membrane terahertz absorbed layer and preparation method thereof

Gou Jun; Wang Jun; Li Weizhi; Jiang Yadong; Wu Zhiming


Archive | 2015

Helical antenna coupled micro-bridge structure and preparation method thereof

Gou Jun; Tang Rong; Wang Jun; Jiang Yadong; Li Weizhi

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Jiang Yadong

University of Electronic Science and Technology of China

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Wang Jun

University of Electronic Science and Technology of China

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Gou Jun

University of Electronic Science and Technology of China

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Liu Ziji

University of Electronic Science and Technology of China

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Liang Zhiqing

University of Electronic Science and Technology of China

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Wu Zhiming

University of Electronic Science and Technology of China

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Tai Huiling

University of Electronic Science and Technology of China

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Wang Tao

University of Electronic Science and Technology of China

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Du Xiaosong

University of Electronic Science and Technology of China

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Yu He

University of Electronic Science and Technology of China

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