Li Xifeng

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Transparent amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) were fabricated using spin-coating technique at a low annealing temperature of 300 ^°C on the 200 mm × 200 mm glass substrate. Solution-processed high-dielectric zirconium oxide dielectric layer, with its amorphous structure and smooth surface, was used to reduce the TFT operating voltage. The resulting TFT was produced with a maximum process temperature of 300 ^°C, and had a saturation mobility of 0.8 cm²/V s, an ON/OFF ratio of 10⁴, and a threshold voltage of 0.1 V.

Influence of plasma treatment on optical and electrical properties of a-InGaZnO films

Amorphous InGaZnO (a-IGZO) films were prepared by radio frequency magnetron sputtering, and as-deposited a-IGZO films were treated with plasma in plasma-enhanced chemical vapor deposition equipment. The effects of plasma surface treatment on the microstructure and the optical and electrical properties of IGZO films were investigated. X-ray diffraction analysis indicated that the IGZO films were amorphous. Results showed that plasma surface treatment have remarkable influence on the resistivity, carrier concentration, and carrier mobility of IGZO films. The analysis of x-ray photoelectron spectroscopy revealed a correlation between the electrical properties of IGZO films and plasma surface treatment. For all the samples, the average transmission in the visible region is more than 80%.