Li Xin-Jian

Temperature-Dependent Photoluminescence of Silicon Nanoporous Pillar Array

Silicon nanoporous pillar array (Si-NPA) is a micron-nanometer hierarchical structure which might be used as functional substrates for constructing optoelectronic nanodevices. This makes understanding the photoluminescence (PL) from Si-NPA important. We measure the PL of Si-NPA in the range of 11–300 K. By analyzing the evolution of the peak energy and intensity with temperature, the ultraviolet, blue, orange and red PL bands from Si-NPA are attributed to the radiative recombination through the deep-levels in silicon oxide, oxygen-related defect states in silicon nanocrystallites (nc-Si), band-to-band transition within nc-Si, and surface/interface states of nc-Si or between nc-Si and SiOx, respectively. At least two non-radiative recombination processes, which are activated at different temperature ranges, are proposed for the PL intensity variation with temperature. These results might provide strong foundations for designing and constructing optoelectronic devices based on silicon nanostructures.

Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ∼480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ∼20 s and ∼10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

Photocatalytic Properties of TiO2/Si-NPA Nano Composite Systems

A new composite system is fabricated by depositing the TiO2 film on a silicon nanoporous pillar array (Si-NPA) and annealing at 500°C using the spin coating method. Such a composite system exhibits a uniform morphology with the micron-dimension pillar array. Photocatalytic properties are investigated based on the degradation of methyl orange dye solution, and the results show that the photocatalytic efficiency of such a nano-composite system is 1.7 times that of the TiO2/glass system. The enhancement of photocatalytic efficiency is attributed to the large surface area of the TiO2/Si-NPA system.

Paths for the Non-radiative Recombination Occurring in CdS:CdO/Si Multi-Interface Nanoheterostructure Array

A CdS:CdO/Si multi-interface nanoheterostructure array (CdS:CdO/Si-NPA) is prepared by a chemical bath deposition method, and three emission bands are observed in the as-grown CdS:CdO film. By measuring its temperature-dependent photoluminescence (PL) spectrum, the variation trends of the peak energies and intensities with temperature for the three bands are obtained. Based on the theoretical analyses and fitting results, the non-radiative recombination processes corresponding to the PL quenching for the three emission bands are attributed to the thermally activated transition between heavy-hole and light-hole levels (at low temperature) and the thermal escape due to the scattering from longitudinal optical phonons (at high temperature), the transition from acceptor levels to surface states, and the transition related to surface defect states, respectively. The clarification of the non-radiative recombination processes in CdS:CdO/Si-NPA might provide useful information for promoting the performance of optoelectronic devices based on CdS/Si nanoheterostructures.

Enhanced Field Emission of Composite Au Nanostructured Network on Si Nanoporous Pillar Array

Nanocrystallites Au particles are deposited on a well-aligned silicon nanoporous pillar array (Si-NPA) surface through immersion plating to form an Au/Si-NPA composite system. It is found that a large number of Au nanoparticles are accumulated on the bottom of Si pillars to form a regular network structure. By studying the field emission properties of such an Au/Si-NPA composite system, we find that the Au/Si-NPA exhibits good field emission properties, with staring field about 2 V/μm and emission current density 67 μA/cm2 at 7.59 V/μm. The enhanced field emission can be deduced from the unique morphology and structure of Au/Si-NPA.

Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

The electron transport behavior across the interface plays an important role in determining the performance of optoelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole—Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of interfacial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

Enhanced Field Emission from Well-Patterned Silicon Nanoporous Pillar Arrays

The silicon nanoporous pillar array (Si-NPA) is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.

Influences of Si and Ni Catalysts on the Growth of Boron Nanowires

Abstract Boron nanowires (BNWs) were synthesized using boron powders as boron source and, Si and Ni as catalysts. The diameter of boron nanowires is about 50 ∼ 100 nm and their length is up to several micrometers. The experiments show that Si promotes the growth of boron nanowires. Using Ni(NO 3 ) 2 as Ni sources rather than NiSO 4 produces more highly effective catalytic effects on the growth of nanowires. Additionally, the catalytic process will be improved by synthesizing Ni x B y catalysts before growth rather than simultaneously decomposing the metal salt and growing the boron nanowires (BNWs).

The Surface Photovoltage Mechanism of a Silicon Nanoporous Pillar Array

The surface photovoltage (SPV) mechanism of a silicon nanoporous pillar array (Si-NPA) is investigated by using SPV spectroscopy in different external electric fields. Through comparisons with the SPV spectrum of single crystal silicon (sc-Si), the silicon nano-crystallite (nc-Si)/SiOx nanostructure of Si-NPA is proved to be capable of producing obvious SPV in the wavelength range 300–580 nm. The SPV for the sc-Si layer and the nc-Si/SiOx nanostructure has shown certain contrary characters in different external electric fields. Through analysis, the localized states in the amorphous SiOx matrix are believed to dominate the SPV for the nc-Si/SiOx nanostructure.

Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array *

A silicon nanoporous pillar array (Si-NPA) is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence (PL) of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites (nc-Si), oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si–O–Si bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.