Liao Ying Zheng

Electrical Properties of the Mixed Bismuth Layer-Structured Bi7Ti4NbO21 Ceramics

A mixed bismuth layer-structured compound, Bi7Ti4NbO21, has been prepared by the conventional solid state reaction. It showed an orthorhombic symmetry with a = 5.4428, b = 5.4043 and c = 29.041 Å by X-ray powder diffraction analysis. The hysteresis loops as a function of temperature were observed with a standardized ferroelectric test system. The remanent polarization and the coercive field of the material at 140°C were 14.06 µC/cm2 and 78.6 kV/cm, respectively. Thermal dependence of dielectric permittivity showed two-phase transitions at around 670°C and 845°C, which were also investigated by TSC and DSC. Finally, piezoelectric properties were obtained with a piezoelectric coefficient d33 = 10 pC/N. It was observed that Bi7Ti4NbO21 underwent a ferroelectric–paraelectric phase transition at 845°C by depolarization experiments.

Effects of Donor Doping on Microstructure and Electrical Properties of Bismuth Layer-Structured Bi4Ti3O12 Ceramics

A study was conducted on the effects of donor dopants, Nb2O5 and WO3, on microstructure and electric properties of Bi4Ti3O12 (BIT) ceramics. X-ray diffraction patterns of the materials showed a single orthorhombic phase structure. The microstructure results revealed the appearance of plate-like grain. The donor doping decreased the conductivity of BIT by as much as 3 orders of magnitude. The dielectric and ferroelectric properties of doped-BIT materials were also investigated. The decrease in the electrical conductivity allowed the doped samples to be poled to develop piezoelectricity. Thermal annealing studies of the samples indicated the donor-doped BIT were suitable candidate materials for high-temperature piezoelectric applications.

Dielectric and Piezoelectric Properties of Na0.42K0.08Bi0.5 TiO3 and Na0.45K0.05Bi0.5TiO3 Ceramics

Na0.42K0.08Bi0.5TiO3 and Na0.45K0.05Bi0.5TiO3 ceramics were fabricated by the solid-state reaction. The structures were determined by X-ray diffraction. Dielectric, ferroelectric and piezoelectric properties of the ceramics were measured and discussed. The ceramics have a single perovskite phase with rhombohedral symmetry at room temperature. The thermal variations of the permittivity follow the law 1/ e − 1/ em = C(T − Tm)2 which is the character of typical relax ferroelectrics, when temperature is higher than the temperature of the maximum of dielectric constant (Tm). The depolarization temperature (Td) of spontaneous polarization is 215oC for Na0.45K0.05Bi0.5TiO3 and 152oC for Na0.42K0.08Bi0.5TiO3 respectively. There exist two different dielectric behaviors of the Na0.42K0.08Bi0.5TiO3 ceramic, without and after poling. Na0.45K0.05Bi0.5TiO3 possesses relatively high kt and Td. The use for device application has been indicated.

The Influence and Mechanism of the Electrical Conductivity of (Ca,Sr)Bi4Ti4O15 Piezoelectric Ceramics by Doping of CeO2

In this paper, the bismuth-layered structure piezoelectric ceramics (Ca,Sr)Bi4Ti4O15 doped with CeO2 are prepared by the solid state reaction method. The crystal structure of the ceramics is determined by X-ray diffraction and the single orthorhombic structure phase is found. However, the doping of CeO2 increase the lattice parameters a, b, c. As a result, the ions of Ce enter into the lattice of the bismuth-layered structure and occupy A sites in the perovskite layer of bismuthlayered structure lattice. The temperature dependence of the conductivity shows that the resistivity increases by doping of CeO2 and reaches its maximum when the doping content is 0.4mol%. The mechanism of the CeO2 doping is also analyzed. By the investigation of XPS, the Ce ions have two types of valences: Ce3+ and Ce4+. The existence of Ce ions strengthened the weak Bi-O bonding and decreased the oxygen vacancies in the lattice, so the ceramics have lower conductivity.

DIELECTRIC RELAXOR BEHAVIOR OF Pb(Mn1/3Sb2/3)O3-Pb(Zr0.52Ti0.48)O3 CERAMICS

ABSTRACT In this paper, xPb(Mn1/3Sb2/3)O3-(1−x)Pb(Zr0.52Ti0.48)O3 (PMS-PZT) ceramics were fabricated by using conventional ceramics technique. Temperature and frequency dependence of the dielectric properties of ceramics were investigated. For PMS-PZT ceramics with 0.08 ≤ x ≤ 0.15, the maximum dielectric constant decrease as the measurement frequency increases and its permittivity maximum temperature (T m) is shifted towards higher temperatures as well, these behavior show ‘relaxor-like’ ferroelectric behavior. While for x = 0.05, there is no shift in transition temperature which shows normal ferroelectric behavior. The mechanism of dielectric relaxor behavior for high PMS content is discussed in the paper.

Influence of CeO2-Doping on the Electrical Properties of ZnO-Bi2O3-Based Varistor Ceramics

The microstructure and electrical properties of CeO2-doped ZnO-Bi2O3-based varistors were investigated for different amounts of the dopant. The phase composition of CeO2-doped samples was similar to the undoped samples. Ce mainly segregated at the grain boundaries within the EDS detection limit. The average grain size decreased from 7.3 to 6.7 μm and the breakdown voltage increased from 438 to 501 V/mm when the content of CeO2 ranged from 0 to 0.2 mol%. The nonlinear coefficient increased from 38 to 51 when the content of CeO2 increased from 0 to 0.1 mol%., but the further doping caused it to decrease up to 44 at 0.2mol%. The leakage current decreased from 1 to 0.4 μA/cm2 when the content of CeO2 ranged from 0 to 0.1 mol%. Then it increased to 0.7 μA/cm2 at 0.2 mol%. The density of interface states, the barrier height and the donor concentration increased when the content of CeO2 ranged from 0 to 0.1 mol%, but decreased at 0.2 mol%. Hence, when the content ranges from 0 to 0.1 mol%, CeO2 acts as a donor and can improve the electrical properties.