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Dive into the research topics where Lígia Marina Amorim is active.

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Featured researches published by Lígia Marina Amorim.


Journal of Applied Physics | 2014

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling

Dailto Silva; Ulrich Wahl; J. G. Correia; Lino Pereira; Lígia Marina Amorim; M.R. da Silva; E Bosne; J. P. Araújo

We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n+, and p+). By means of on-line emission channeling, 65Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC), and displaced tetrahedral interstitial towards anti-bonding sites (near-T). We suggest that the large majority of the observed lattice sites are not related to the isolated form of Ni but rather to its trapping into vacancy-related defects produced during the implantation. While near-BC sites are prominent after annealing up to 300–500 °C, near-T sites are preferred after 500–600 °C anneals. Long-range diffusion starts at 600–700 °C. We show evidence of Ni diffusion towards the surface and its further trapping on near-T sites at the Rp/2 region, providing a clear picture of the microscopic mechanism of Ni gettering by vacancy-type defects. The high thermal stability of near-BC sites in n+-type Si, ...


Applied Physics Letters | 2013

Precise lattice location of substitutional and interstitial Mg in AlN

Lígia Marina Amorim; Ulrich Wahl; L. M. C. Pereira; Stefan Decoster; Dailto Silva; M.R. da Silva; A. Gottberg; J. G. Correia; K. Temst; André Vantomme

The lattice site location of radioactive 27Mg implanted in AlN was determined by means of emission channeling. The majority of the 27Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 A experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors.


Semiconductor Science and Technology | 2016

Lattice sites of Na dopants in ZnO

Ulrich Wahl; Lígia Marina Amorim; Joao Martins Correia; Stefan Decoster; Lino Pereira; Manuel Ribeiro da Silva

The angular distribution of β particles emitted by the radioactive isotope Na was monitored following implantation into ZnO single crystals at fluences above 5×10 cm at CERN’s ISOLDE facility. We identified sodium on two distinct sites: on substitutional Zn sites and on interstitial sites that are close to the so-called octahedral site. The interstitial Na was to large extent converted to substitutional Na already for annealing at 200°C, from which an activation energy of 0.8−1.3 eV, most likely around 1.2 eV, is estimated for the migration of interstitial Na in ZnO.


International African Symposium on Exotic Nuclei | 2015

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE Facility

Ulrich Wahl; J. G. Correia; Apr Costa; E David-Bosne; L. M. C. Pereira; Lígia Marina Amorim; V. Augustyns; K. Temst; André Vantomme; M.R. da Silva; Dailto Silva; J. P. Araújo; Pedro Cavaleiro Miranda; K. Bharuth-Ram

We give an overview on the historical development and current program for lattice location studies at CERN’s ISOLDE facility, where the EC-SLI (Emission Channeling with Short-Lived Isotopes) collaboration maintains several setups for this type of experiments. We illustrate that the three most decisive factors for the success of the technique are access to facilities producing radioactive isotopes, position-sensitive detectors for the emitted decay particles, and reliable simulation codes which allow for quantitative analysis.


Physical Review B | 2012

Evidence of N substitution by Mn in GaN

L. M. C. Pereira; Ulrich Wahl; J. G. Correia; Stefan Decoster; Lígia Marina Amorim; M.R. da Silva; J. P. Araújo; André Vantomme


Physical Review B | 2012

Stability and diffusion of interstitial and substitutional Mn in GaAs of different doping types

L. M. C. Pereira; Ulrich Wahl; Stefan Decoster; J. G. Correia; Lígia Marina Amorim; M.R. da Silva; J. P. Araújo; André Vantomme


ECS Journal of Solid State Science and Technology | 2014

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

Ruben Lieten; Claudia Fleischmann; Sven Peters; Nuno M. Santos; Lígia Marina Amorim; Yosuke Shimura; Noriyuki Uchida; Tatsuro Maeda; Sergey I. Nikitenko; Thierry Conard; Jean-Pierre Locquet; Kristiaan Temst; André Vantomme


Applied Physics A | 2016

Direct observation of the lattice sites of implanted manganese in silicon

Daniel José da Silva; Ulrich Wahl; J. G. Correia; Lígia Marina Amorim; Stefan Decoster; Manuel Ribeiro da Silva; Lino Pereira; J. P. Araújo


Semiconductor Science and Technology | 2018

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC

Apr Costa; Ulrich Wahl; J. G. Correia; E David-Bosne; Lígia Marina Amorim; V. Augustyns; Dailto Silva; M.R. da Silva; L. M. C. Pereira


Journal of Physics D | 2017

Lattice location of implanted transition metals in 3C–SiC

Apr Costa; Ulrich Wahl; J. G. Correia; E Bosne; Lígia Marina Amorim; V. Augustyns; Daniel José da Silva; M.R. da Silva; K. Bharuth-Ram; L. M. C. Pereira

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Ulrich Wahl

Instituto Superior Técnico

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J. G. Correia

Instituto Superior Técnico

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André Vantomme

Catholic University of Leuven

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L. M. C. Pereira

Katholieke Universiteit Leuven

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Stefan Decoster

Katholieke Universiteit Leuven

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Lino Pereira

Katholieke Universiteit Leuven

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V. Augustyns

Katholieke Universiteit Leuven

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