Lin-Feng Wang
Tsinghua University
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Lin-Feng Wang.
Scientific Reports | 2015
Tian-Bao Ma; Lin-Feng Wang; Yuan-Zhong Hu; Xin Li; Hui Wang
Amorphous carbon is one of the most lubricious materials known, but the mechanism is not well understood. It is counterintuitive that such a strong covalent solid could exhibit exceptional lubricity. A prevailing view is that lubricity of amorphous carbon results from chemical passivation of dangling bonds on surfaces. Here we show instead that lubricity arises from shear induced strain localization, which, instead of homogeneous deformation, dominates the shearing process. Shear localization is characterized by covalent bond reorientation, phase transformation and structural ordering preferentially in a localized region, namely tribolayer, resulting in shear weakening. We further demonstrate an anomalous pressure induced transition from stick-slip friction to continuous sliding with ultralow friction, due to gradual clustering and layering of graphitic sheets in the tribolayer. The proposed shear localization mechanism sheds light on the mechanism of superlubricity, and would enrich our understanding of lubrication mechanism of a wide variety of amorphous materials.
Nanotechnology | 2005
Jiaqiang Xu; Jianbin Luo; Xinchun Lu; Lin-Feng Wang; Guoshun Pan; Shizhu Wen
Nanoparticle impacts on an ultra-smooth surface always occur in nano-machining processes, such as polishing of a monocrystalline silicon wafer, which is an important process in the manufacture of semiconductors. A fundamental understanding of nanoparticle impacts on a solid surface is important to control and prevent the deformation of the surface. In this study, a cylindrical liquid jet containing de-ionized water and SiO2 nanoparticles impacts obliquely on a single crystal silicon surface at a speed of 50?m?s?1. The microstructure of the impacted surface was examined using a high resolution transmission electron microscope, an atomic force microscope, etc. Some crystal defects, lattice distortion, grain refinement and rotation of grains in the surface layer of the silicon wafer after exposure for 30?s have been observed. However, when the exposure time is extended to 10?min, an amorphous layer containing crystal grains is exhibited in the subsurface, and many craters, scratches and atom pileups can be found in the surface.
Nanotechnology | 2014
Lin-Feng Wang; Tian-Bao Ma; Yuan-Zhong Hu; Quanshui Zheng; Hui Wang; Jianbin Luo
The atomic-scale friction of the fluorographene (FG)/MoS2 heterostructure is investigated using first-principles calculations. Due to the intrinsic lattice mismatch and formation of periodic Moiré patterns, the potential energy surface of the FG/MoS2 heterostructure is ultrasmooth and the interlayer shear strength is reduced by nearly two orders of magnitude, compared with both FG/FG and MoS2/MoS2 bilayers, entering the superlubricity regime. The size dependency of superlubricity is revealed as being based on the relationship between the emergence of Moiré patterns and the lattice mismatch ratio for heterostructures.
Physical Review B | 2016
Penghua Zhang; Xiliang Peng; Tian Qian; Pierre Richard; Xiaoying Shi; J. Ma; B. B. Fu; Ying Guo; Zhiqing Han; Shancai Wang; Lin-Feng Wang; Qi-Kun Xue; Jiuning Hu; Yujie Sun; H. Ding
It is well known that superconductivity in Fe-based materials is favoured under tetragonal symmetry, whereas competing orders such as spin-density-wave (SDW) and nematic orders emerge or are reinforced upon breaking the fourfold (C4) symmetry. Accordingly, suppression of orthorhombicity below the superconducting transition temperature (Tc) is found in underdoped compounds. Epitaxial film growth on selected substrates allows the design of crystal specific lattice distortions. Here we show that despite the breakdown of the C4 symmetry induced by a 5% difference in the lattice parameters, monolayers of FeSe grown by molecular beam epitaxy (MBE) on the (110) surface of SrTiO3 (STO) substrates [FeSe/STO(110)] exhibit a large nearly isotropic superconducting (SC) gap of 16 meV closing around 60 K. Our results on this new interfacial material, similar to those obtained previously on FeSe/STO(001), contradict the common belief that the C4 symmetry is essential for reaching high Tcs in Fe-based superconductors.
Physical Review B | 2016
P. Zhang; Xiliang Peng; T. Qian; P. Richard; Xiaoying Shi; J. Ma; B. B. Fu; Ying Guo; Zhiqing Han; S.-C. Wang; Lin-Feng Wang; Qi-Kun Xue; Jiuning Hu; Yue Sun; H. Ding
It is well known that superconductivity in Fe-based materials is favoured under tetragonal symmetry, whereas competing orders such as spin-density-wave (SDW) and nematic orders emerge or are reinforced upon breaking the fourfold (C4) symmetry. Accordingly, suppression of orthorhombicity below the superconducting transition temperature (Tc) is found in underdoped compounds. Epitaxial film growth on selected substrates allows the design of crystal specific lattice distortions. Here we show that despite the breakdown of the C4 symmetry induced by a 5% difference in the lattice parameters, monolayers of FeSe grown by molecular beam epitaxy (MBE) on the (110) surface of SrTiO3 (STO) substrates [FeSe/STO(110)] exhibit a large nearly isotropic superconducting (SC) gap of 16 meV closing around 60 K. Our results on this new interfacial material, similar to those obtained previously on FeSe/STO(001), contradict the common belief that the C4 symmetry is essential for reaching high Tcs in Fe-based superconductors.
Physical Review B | 2012
Lin-Feng Wang; Tian-Bao Ma; Yuan-Zhong Hu; Hui Wang
Journal of Physical Chemistry C | 2013
Lin-Feng Wang; Tian-Bao Ma; Yuan-Zhong Hu; Hui Wang; Tian-Min Shao
Tribology International | 2007
Jun Xu; Jianbin Luo; Lin-Feng Wang; Xinchun Lu
Chemical Physics Letters | 2011
Tian-Bao Ma; Yuan-Zhong Hu; Liang Xu; Lin-Feng Wang; Hui Wang
Nanoscale | 2017
Lin-Feng Wang; Xiang Zhou; Tian-Bao Ma; Dameng Liu; Lei Gao; Xin Li; Jun Zhang; Yuan-Zhong Hu; Hui Wang; Yadong Dai; Jianbin Luo