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Featured researches published by Linbo Long.


embedded software | 2014

Building high-performance smartphones via non-volatile memory: the swap approach

Kan Zhong; Tianzheng Wang; Xiao Zhu; Linbo Long; Duo Liu; Weichen Liu; Zili Shao; Edwin Hsing-Mean Sha

Smartphones are getting increasingly high-performance with advances in mobile processors and larger main memories to support feature-rich applications. However, the storage subsystem has always been a prohibitive factor that slows down the pace of reaching even higher performance while maintaining good user experience. Despite todays smart-phones are equipped with larger-than-ever main memories, they consume more energy and still run out of memory. But the slow NAND flash based storage vetoes the possibility of swapping-an important technique to extend main memory-and leaves a system that constantly terminates user applications under memory pressure. In this paper, we revisit swapping for smartphones with fast, byte-addressable, non-volatile memory (NVM) technologies. Instead of using flash, we build the swap area with NVM, to allow high performance without sacrificing user experience. Based on NVMs high performance and byte-addressability, we show that a copy-on-write swap-in scheme can achieve even better performance by avoiding unnecessary memory copy operations. To avoid fast worn-out of certain NVMs, we also propose Heap-Wear, a wear leveling algorithm that more evenly distributes writes in NVM. Evaluation results based on the Google Nexus 5 smartphone show that our solution can effectively enhance smartphone performance and give better wear-leveling of NVM.


IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2016

Energy-Efficient In-Memory Paging for Smartphones

Kan Zhong; Duo Liu; Liang Liang; Xiao Zhu; Linbo Long; Yi Wang; Edwin Hsing-Mean Sha

Smartphones are becoming increasingly energy-hungry to support feature-rich applications, posing a lot of pressure on battery lifetime and making energy consumption a non-negligible issue. In particular, dynamic random access memory (DRAM)-based main memory subsystem is a major contributor to the energy consumption of mobile devices. In this paper, we propose direct read (DR). Swap, an energy-efficient in-memory paging design to reduce energy consumption in smartphones. In DR. Swap, we adopt emerging energy-efficient nonvolatile memory (NVM) and use it as the swap area. Utilizing NVMs byte-addressability, we propose DR which guarantees zero memory copy for read-only requests when accessing a page in swap area. To better understand the energy consumption of swapping, we build an energy model to analyze the energy consumption of different paging architectures. We evaluate DR. Swap based on the Google Nexus 5 smartphone, experimental results show that our technique can reduce more than 50% energy consumption compared to DRAM backed swapping.


Journal of Systems Architecture | 2014

A space allocation and reuse strategy for PCM-based embedded systems

Linbo Long; Duo Liu; Jingtong Hu; Shouzhen Gu; Qingfeng Zhuge; Edwin Hsing-Mean Sha

Phase change memory (PCM) has emerged as a promising candidate to replace DRAM in embedded systems, due to its appealing properties, such as zero leakage power, scalability, shock-resistivity and high density. However, it can only sustain a limited number of write operations. On the other hand, as a program in embedded systems usually distributes write traffic in an extremely unbalanced way, which could further decrease PCM lifetime.In this paper, we propose a space-based wear leveling technique in software compiler level by exploiting the program-specific features. The basic idea is to extend frequently written variables into specific-sized arrays, and evenly distribute writes on allocated array. In such way, we can effectively distribute the write traffic of the program across the whole PCM chip. A space allocation and reuse (SAR) strategy and a polynomial-time algorithm are proposed to produce optimal and near-optimal space allocation, respectively, for achieving a balanced write distribution. The experimental results show our technique can greatly extend the lifetime of PCM-based embedded systems compared with the previous work, and achieve approximately 94% the theoretical maximum of lifetime. Compared with a baseline scheme without wear-leveling mechanism, our technique introduces no more than 0.8% extra writes and 0.7% running overhead.


asia and south pacific design automation conference | 2015

Balloonfish: Utilizing morphable resistive memory in mobile virtualization

Linbo Long; Duo Liu; Xiao Zhu; Kan Zhong; Zili Shao; Edwin Hsing-Mean Sha

Virtualization offers significant benefits such as better isolation and security for mobile systems. However, the limited amount of memory and virtualizations memory-demanding nature makes it challenging to virtualize mobile systems efficiently. In this paper, we utilize morphable resistive memories to design a high-performance mobile system with extensible memory space. With morphable resistive memory, we convert the memory cell state between multi-level and single-level to achieve a balance between performance and memory space. Our evaluation based on the Samsung Exynos 5250 SoC with real Android applications shows that our system achieve 27% performance improvement compared with the baseline scheme.


embedded and real-time computing systems and applications | 2013

A space-based wear leveling for PCM-based embedded systems

Linbo Long; Dou Liu; Jingtong Hu; Shouzhen Gu; Qingfeng Zhuge; Edwin Hsing-Mean Sha

Phase change memory (PCM) has emerged as a promising candidate to replace DRAM in embedded systems. However, it can only sustain a limited number of write operations. To solve this issue, this paper proposes a novel and effective wear-leveling technique in software level to prolong the lifetime of PCM-based embedded systems. A polynomial-time algorithm, Multi-Space Wear Leveling Algorithm (MWL), is proposed to achieve effective wear-leveling. The experimental results show our technique can greatly extend the lifetime of PCM-based embedded systems compared with the previous work. Compared with the method without adopting wear-leveling, it introduces no more than 0.7% extra writes and 0.6% running overhead.


IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 2016

Morphable Resistive Memory Optimization for Mobile Virtualization

Linbo Long; Duo Liu; Liang Liang; Xiao Zhu; Kan Zhong; Zili Shao; Edwin Hsing-Mean Sha

Virtualization offers significant benefits, such as better isolation and security for mobile systems. However, the limited amount of memory and virtualizations memory-demanding nature make it challenging to virtualize mobile systems efficiently. In this paper, we utilize morphable resistive memories to design a high-performance mobile system with an extensible memory space. With morphable resistive memories, a simple and effective page management technique, Balloonfish, is proposed to convert the memory cell state between multilevel and single-level for achieving a balance between performance and memory space. First, an application-specific page allocation is proposed for managing morphable resistive memories in virtualized mobile systems. Besides, we use a balloon-style algorithm to balance memory allocation among multiple virtual machines. Our evaluation based on the Samsung Exynos 5250 system-on-chip with various real Android applications shows that our system achieves 28.63% performance improvement compared with the baseline scheme.


design, automation, and test in europe | 2015

n Code: limiting harmful writes to emerging mobile NVRAM through code swapping

Kan Zhong; Duo Liu; Linbo Long; Xiao Zhu; Weichen Liu; Qingfeng Zhuge; Edwin Hsing-Mean Sha

Mobile applications are becoming more and more powerful but also dependent on large main memories, which consume a large portion of system energy. Swapping to byte-addressable, non-volatile memory (NVRAM) is a promising solution to this problem. However, most NVRAMs have limited write endurance. To make it practical, the design of an NVRAM based swapping system must also consider endurance. In this paper, we target at prolonging the lifetime of NVRAM based swap area in mobile devices. Different from traditional wisdom, such as wear leveling and hot/cold data identification, we propose to build a system called nCode, which exploits the fact that code pages are easy to identify, read-only, and therefore a perfect candidate for swapping. Utilizing NVRAMs byte-addressability, we support execute-in-place (XIP) of the code pages in the swap area, without copying them back to DRAM based main memory. Experimental results based on the Google Nexus 5 smartphone show that nCode can effectively prolong the lifetime of NVRAM under various workloads.


2015 IEEE Non-Volatile Memory System and Applications Symposium (NVMSA) | 2015

MobiLock: an energy-aware encryption mechanism for NVRAM-based mobile devices

Xianlu Luo; Duo Liu; Liang Liangy; Yang Li; Kan Zhong; Linbo Long

Emerging non-volatile memory (NVRAM) has been considered as the most promising candidate of DRAM for future main memory design in mobile devices. NVRAM-based main memory exhibits attractive features, such as byte-addressability, low standby power, high density and near DRAM performance. However, the nature of non-volatility makes NVRAM vulnerable to be attacked by malicious programs. Though several data encryption techniques have been proposed to solve this problem, they do not consider the limited resources in mobile devices. To address this issue, in this paper, we propose an energyaware encryption mechanism, named MobiLock, to effectively enhance the security of NVRAM-based main memory in mobile devices. The basic idea is to enhance the encryption and decryption performance by utilizing cache and concurrency mechanisms, respectively. To achieve this, we first develop a cache mechanism to cache the encrypted intermediate data (i.e., PAD) whose plaintexts are updated frequently, for accelerating decryption and reducing reamputation of PAD. We then propose a concurrency mechanism to read the ciphertext in NVRAM and calculate the PAD simultaneously, to reduce the decryption latency. The evaluation results show that our technique can effectively reduce encryption energy consumption and decryption latency, respectively.


Future Generation Computer Systems | 2017

Revisiting swapping in mobile systems with SwapBench

Xiao Zhu; Duo Liu; Liang Liang; Kan Zhong; Linbo Long; Meikang Qiu; Zili Shao; Edwin Hsing-Mean Sha

Abstract Mobile systems such as smartphones and tablets are re-adopting swapping–a mature but rarely used OS feature–to extend memory capacity without adding more DRAM, especially low-end devices. This resurgence of swapping in mobile systems has inspired both traditional “off-the-rack” schemes and new approaches based on compression and new hardware. Their vastly different designs, however, make them difficult for system designers to measure, compare and revise. In this paper, we first propose an evaluation framework, SwapBench, to appraise swap schemes and focus on two important but overlooked metrics: application launch and switch. And cross-validation with microbenchmarks shows that SwapBench is accurate. Then, we present the first comprehensive evaluation from three dimensions: system architecture, application launch time and application switch delays, to understand and summarize the impacts of swapping in mobile systems. Finally, based on the findings from SwapBench, we give our conclusion and suggestions of different approaches to swapping in mobile systems.


high performance computing and communications | 2015

TLC-FTL: Workload-Aware Flash Translation Layer for TLC/SLC Dual-Mode Flash Memory in Embedded Systems

Lei Yao; Duo Liu; Kan Zhong; Linbo Long; Zili Shao

Similar to traditional NAND flash memory, triple-level cell (TLC) flash memory is used as secondary storage to meet the fast growing demands on storage capacity. TLC flash memory exhibits attractive features such as shock resistance, high density, low cost, non-volatility and low access latency natures. However, TLC flash memory also has some extra limitations, such as write disturbance, low performances and very limited cycles compared to single-level cell (SLC) flash memory. In this paper, we propose a workload-aware flash translation layer, named TLC-FTL, for the TLC/SLC dual-mode enabled flash memory, to improve performance and lifespan of the system. The basic idea is to classify metadata/userdata according to their access pattern, and store the hot/code data in SLC/TLC-mode flash, respectively. TLC-FTL dynamically allocates TLC/SLC capacity based on different workloads. Experimental results show that TLC-FTL can effectively improve the performance and lifetime of the TLC/SLC dual-mode flash memory in embedded systems.

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Duo Liu

Chongqing University

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Xiao Zhu

Chongqing University

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Zili Shao

Hong Kong Polytechnic University

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Weichen Liu

Chinese Ministry of Education

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Qingfeng Zhuge

University of Texas at Dallas

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