Linzi E. Dodd

Optimizing MOM diode performance via the oxidation technique

This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I–V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V−1 unbiased, 15 V−1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer

Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of

Low friction droplet transportation on a substrate with a selective Leidenfrost effect

{\hbox {Ti}/\hbox {TiO}_{x}/\hbox {Pt}}

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Ti/TiOx/Pt MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the

Micromachined Devices for Use in Terahertz Applications

{\hbox {TiO}_{x}}

The static and dynamic response of SU-8 electrothermal microgrippers of varying thickness

TiOx layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the