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Dive into the research topics where Lionel F. Houlet is active.

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Featured researches published by Lionel F. Houlet.


Japanese Journal of Applied Physics | 2006

Catalyst Combustors with B-Doped SiGe/Au Thermopile for Micro-Power-Generation

Maiko Nishibori; Woosuck Shin; Kazuki Tajima; Lionel F. Houlet; Noriya Izu; Ichiro Matsubara; Norimitsu Murayama

A micromachined thermoelectric (TE) power generator with a ceramic catalyst combustor operating at room temperature (RT) has been developed. A thermopile of 20 thin-film couples of B-doped Si0.8Ge0.2/Au and a Pt-loaded alumina ceramic thick-film catalyst combustor were integrated on a thin dielectric membrane, which was fabricated by bulk-Si wet etching. We have demonstrated a successful power generation of 0.26 µW using the micro-TE-generator with a fuel gas flow of 3 vol. % H2 in air, 1000 ccm, at RT.


Journal of The Electrochemical Society | 2007

Boron-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for Microthermoelectric Hydrogen Sensor

Kazuki Tajima; Woosuck Shin; Lionel F. Houlet; Toshio Itoh; Noriya Izu; Ichiro Matsubara

A boron-doped Si 0.8 Ge 0.2 2 thin film of 300 nm thickness was deposited by helicon sputtering. Thermal annealing was carried out to crystallize as-deposited amorphous-like Si 0.8 Ge 0.2 thin films. The thermoelectric properties of the films, such as an electrical conductivity, a carrier concentration, a mobility, and a Seebeck coefficient, were investigated. As a result, the films by helicon sputtering exhibited finer grains and smoother surface than those of the film deposited by conventional radio frequency (rf) sputtering. The film deposited by helicon sputtering with an rf induction coil power of 50 W and annealed at 1100°C for 5 h showed a resistivity of 0.011 Ω cm, a Seebeck coefficient of 0.13 mV/K, a Hall mobility of 9.92 cm 2 /V s, and a carrier concentration of 5.7 X 10 19 cm -3 at 100°C. A microthermoelectric hydrogen sensor (micro-THS) with the boron-doped Si 0.8 Ge 0.2 thin film and annealed at 1100°C for 5 h showed high sensitivity for hydrogen gas in air. This sensor could have wide detection range of hydrogen concentration from 1 ppm to 3%. At an operating temperature of 100°C, for the low hydrogen concentration of 5 ppm, clear response was shown by the micro-THS with the Si 0.8 Ge 0.2 film deposited by helicon sputtering and annealed at 1100°C for 5 h.


Japanese Journal of Applied Physics | 2004

InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection

Lionel F. Houlet; Hiroshi Yamaguchi; Sen Miyashita; Yoshiro Hirayama

We report on the fabrication and characterization of 0.3-µm-thick piezoresistive cantilevers based on the InAs/AlGaSb heterostructure. The dependence of the displacement resolution on the cantilever size, which ranges from 20×10 to 2×1 µm2, has been studied by a novel characterization method using an atomic force microscope. The results show that downscaling the cantilevers improves their performances, and an optimum resolution of 0.26 A/Hz0.5 was obtained with a 3×1.5 µm2 cantilever at a modulation frequency of 714 Hz. A finite-element simulator allowed the calculation of the resonance frequencies and a maximum value of 20.5 MHz was obtained for the 3×1.5 µm2 cantilever.


ieee sensors | 2007

Safe membrane-releasing process for thermoelectric hydrogen gas sensor

Lionel F. Houlet; Woosuck Shin; Maiko Nishibori; Noriya Izu; Toshio Itoh; I. Matsubara

We present here a safe membrane-releasing process in KOH for the fabrication of a high performance freestanding device and the mass production of a single membrane device for the hydrogen gas sensing application. The fabricated devices are thermoelectric hydrogen gas sensors based on the thermoelectric detection of the catalytic hydrogen combustion. The free-standing device has a voltage response 2.7 times higher than the single membrane device. The proposed membrane-releasing process, which combines black wax and a KOH protective polymer coat, shows fabrication yields of 31%, 50% for the free-standing device and 47% for the single-membrane device produced in mass.


Japanese Journal of Applied Physics | 2006

Micro-Thermoelectric Hydrogen Sensor of Three Different Membrane Structures

Kazuki Tajima; Lionel F. Houlet; Woosuck Shin; Toshio Itoh; Noriya Izu; Ichiro Matsubara

We prepared micro-thermoelectric hydrogen sensors (micro-THSs) operating with a combination of the thermoelectric effect of SiGe thin film and Pt-catalyzed exothermic hydrogen oxidation of the catalyst. The membrane area of each sensor was heated by a micro heater. The responses of the micro-THSs with three different types of membranes to hydrogen in air were investigated. The micro-THS with a single membrane, which had a better thermal isolation than those of other membranes, reduced the power consumption of 251 mW and the time required to heat the membrane by 5 s. This micro-THS with a single membrane showed the optimal gas sensing property of voltage signal of 1.13 mV for 1% hydrogen in air with the low detection limit of 50 ppm.


Journal of The Ceramic Society of Japan | 2006

New structural design of micro-thermoelectric sensor for wide range hydrogen detection

Maiko Nishibori; Woosuck Shin; Lionel F. Houlet; Kazuki Tajima; Toshio Itoh; Noriya Izu; Norimitsu Murayama; Ichiro Matsubara


Sensors and Actuators B-chemical | 2009

Fabrication of thermoelectric gas sensors on micro-hotplates

Woosuck Shin; Maiko Nishibori; Lionel F. Houlet; Toshio Itoh; Noriya Izu; I. Matsubara


Journal of The European Ceramic Society | 2008

Long-term stability of Pt/alumina catalyst combustors for micro-gas sensor application

Maiko Nishibori; Woosuck Shin; Kazuki Tajima; Lionel F. Houlet; Noriya Izu; Toshio Itoh; I. Matsubara


Sensors and Actuators B-chemical | 2006

Integration of ceramic catalyst on micro-thermoelectric gas sensor

Woosuck Shin; Maiko Nishibori; Kazuki Tajima; Lionel F. Houlet; Yeongsoo Choi; Noriya Izu; Norimitsu Murayama; Ichiro Matsubara


Sensors and Actuators B-chemical | 2008

Thermopile sensor-devices for the catalytic detection of hydrogen gas

Lionel F. Houlet; Woosuck Shin; Kazuki Tajima; Maiko Nishibori; Noriya Izu; Toshio Itoh; Ichiro Matsubara

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Noriya Izu

National Institute of Advanced Industrial Science and Technology

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Woosuck Shin

National Institute of Advanced Industrial Science and Technology

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Toshio Itoh

National Institute of Advanced Industrial Science and Technology

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Ichiro Matsubara

National Institute of Advanced Industrial Science and Technology

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Kazuki Tajima

National Institute of Advanced Industrial Science and Technology

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I. Matsubara

National Institute of Advanced Industrial Science and Technology

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Norimitsu Murayama

National Institute of Advanced Industrial Science and Technology

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Yeongsoo Choi

National Institute of Advanced Industrial Science and Technology

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