Liu Bao-ting

A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides

Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption. By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces, the development of oxide transistors may be able to perform. We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor, p-type colossal magnetoresistance manganite, and a ferroelectric barrier (i). From this, bipolar transistors were fabricated at the back-to-back p-i-n junctions, for which the Schottky emission and p-n junction barriers, as well as the ferroelectric polarization, were integrated into the interfaces to control the transport properties; a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed. These results present a real possibility to date for developing bipolar all perovskite oxide transistors.

Effect of Annealing Temperature on Electrical Properties of Ferroelectric Bi3.25La0.75Ti3O12 Capacitors

Lanthanum-modified bismuth titanate (Bi3.25La0.75Ti3O12, BLT) thin films are fabricated on platinized Si wafers by the sol-gel method, and the effect of annealing temperatures ranging from 650°C to 800°C on the electrical properties of Pt/BLT/Pt capacitors are investigated. It is found that polarization and leakage current of BLT capacitors strongly depend on the annealing temperature although all the capacitors demonstrate very similar characteristics, except the value of polarization, in pulse-width dependence, retention, and fatigue. Remanent polarization increases with the increase of annealing temperature, and annealing temperature of 700°C can yield the largest remanent polarization, and then polarization decreases with increasing annealing temperature. For the 700°C annealed Pt/BLT/Pt capacitor, the remanent polarization 2Pr and the coercive field 2Ec, at an electric field of 226kV/cm, are 23.8μC/cm2 and 130kV/cm, respectively. Dielectric breakdown voltages of BLT films annealed at 750°C and 800°C are much lower than those annealed at 650°C and 700°C. At 100kV/cm, the leakage currents of BLT films prepared at 650°C and 700°C are only 1.5 × 10−6 A/cm2 and 8. 9 × 10−7 A/cm2, respectively. Moreover, all the Pt/BLT/Pt capacitors exhibit excellent retention properties after a cumulative time of 1 × 104 s and do not show any significant fatigue up to 1 × 1010 switching cycles at frequency of 1 MHz.