Liu Ji-Tian

Range distribution of fluorine in 19F+-implanted LiNbO3

Depth profiles of fluorine in 19F+implanted LiNbO3 have been accurately measured using the 19F(p, αγ)16O resonant nuclear reaction at ER = 872.1 keV, with Γ = 4.2 keV. A proper convolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The experimental range distribution parameters, Rp and ΔRp, were compared with those obtained by Monte Carlo simulation using a computer code developed recently in this group and with results obtained using the TRIM90 code. It shows that the experimental Rp values agree with the Monte Carlo simulation values very well, while the experimental ΔRp values are larger than those obtained from the simulations. The simulation with our computer code improves the agreement between the experimental and calculated range straggling, ΔRp.

Distribution of implanted Hg ions in LiNbO3

Abstract Implanted Hg ions distributions in LiNbO 3 at energies from 50 to 400 keV are studied by 2.1 MeV 4 He 2+ Rutherford backscattering. The values obtained for the mean projected range and range straggling are compared with calculated results based on Biersacks angular diffusion model and TRIM simulation. Good agreement was found within experimental error.

Analysis of bromine ion range distributions in glass

MeV 4 He + backscattering has been performed on Br implanted into glass. Analysis of backscattering measurement gives the mean projected range and range straggling of implanted ions. The distributions were obtained by implanting 5 × 10 15 Br + /cm 2 at room temperature at energies from 50 to 400 keV into glass chosen as a typical multielemental insulator. We have used the Biersack theory to calculate mean projected range and range straggling. The measured range and range straggling have been compared to the Biersack model. The results show good agreement between the experimental and theoretical values within the experimental error.

Tilted Angle Implantation of Xe Ions in potassium Titanyl Phosphate

200 ke V Xe ions were implanted in potassium titanyl phosphate (KTP) at deferent angles: 0°, 45° and 60°. The lateral spread of Xe ions in KTP was studied by Rutherford backscattering of 2.1 Me V He ions. The result is compared with the theoretical prediction. The lateral spread is found in good agreement with calculated value within 17%.

Range profile of 50–400 keV mercury ions in cobalt films

Abstract Range profiles of Hg+ and Hg2+ implanted in cobalt films at energies from 50 to 400 keV are measured by 2.1 MeV4He2+ Rutherford backscattering. The obtained projected range and range straggling are compared with the present calculation based on Biersacks angular diffusion model and a TRIM simulation.

Range profiles of 50 to 400 keV xenon ions in a silicate glass

The range profiles of Xe ions implanted in a silicate glass at energies from 50 to 400 keV have been studied by the Rutherford backscattering technique. The data obtained are compared with the calculated values based on Biersacks angular diffusion model (1981). The results show that the measured mean projected range is in good agreement with the calculated value, but a marked improvement in the range straggling fit is obtained after including the second-order energy loss.

Range distribution of heavy ions in multi-elemental targets

Abstract Some results of range distribution on Hg + implanted NaSBN and CeSBN crystals are given. A computer program is written based on the angular diffusion model by Biersack to calculate the mean projected range and range straggling. For comparison, other published experimental data are also included. The comparison between experimental and theoretical values indicates that the measured projected ranges are in good agreement with those predicted by the Biersack model within experimental error, and a marked improvement in range stragglings is obtained after considering the second order energy loss.

Mean projected range of ions in homogeneous materials

Mean projected ranges of Hg+ implanted at energies from 50 to 400 keV in aluminium are measured by MeV4He+ Rutherford backscattering. The obtained projected ranges and other previous results of Br+ and Hg+ implanted in silicon, quartz crystal and glass are compared with Biersacks angular diffusion model. The results show that there is good agreement between the experimental and calculated mean projected ranges to within experimental error.