Liu Lifeng

Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.

Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1 Ti0.9O2−δ Films Prepared by Sol-Gel Method

The Co-doped TiO2 films (Co0.1Ti0.9O2−δ) are prepared on silicon substrates by sol-gel method and post annealing. The Co0.1Ti0.9O2−δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism (RTFM) is observed. Experimental evidences show that the RTFM in the Co0.1Ti0.9O2−δ film may come from the Co-doped TiO2 matrix and is related to the oxygen vacancies created by vacuum annealing.