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Dive into the research topics where Liu Yingkai is active.

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Featured researches published by Liu Yingkai.


Chinese Physics B | 2014

Electrically tunable resonant terahertz transmission in subwavelength hole arrays

Zhang Ying; Liu Yingkai; Han Jiaguang

An actively enhanced resonant transmission in a plasmonic array of subwavelength holes is demonstrated by use of terahertz time-domain spectroscopy. By connecting this two-dimensional element into an electrical circuit, tunable resonance enhancement is observed in arrays made from good and relatively poor metals. The tunable feature is attributed to the nonlinear electric response of the periodic hole array film, which is confirmed by its voltage—current behavior. This finding could lead to a unique route to active plasmonic devices, such as tunable filters, spatial modulators, and integrated terahertz optoelectronic components.


Chinese Physics B | 2012

Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy

Kong Xiao-Yan; Yue Lei-Lei; Chen Yu; Liu Yingkai

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1–0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.


Chinese Physics B | 2014

Electronic structure and magnetic properties of (Mn, N)-codoped ZnO

Wang Qianjin; Wang Jinbin; Zhong Xiangli; Tan Qiuhong; Liu Yingkai

The electronic structures and magnetic properties of (Mn, N)-codoped ZnO are investigated by using the first-principles calculations. In the ferromagnetic state, as N substitutes for the intermediate O atom of the nearest neighboring Mn ions, about 0.5 electron per Mn2+ ion transfers to the N2− ion, which leads to the high-state Mn ions (close to +2.5) and trivalent N3− ions. In an antiferromagnetic state, one electron transfers to the N2− ion from the downspin Mn2+ ion, while no electron transfer occurs for the upspin Mn2+ ion. The (Mn, N)-codoped ZnO system shows ferromagnetism, which is attributed to the hybridization between Mn 3d and N 2p orbitals.


Nanoscale Research Letters | 2015

Multicolor Photodetector of a Single Er3+-Doped CdS Nanoribbon

Hou Dedong; Liu Yingkai; De-Peng Yu


Archive | 2017

Stratiform molybdenum disulfide ferroelectric memory ware based on graphite alkene electrode

Tan Qiuhong; Yang Bixiang; Zhang Fenzhu; Wang Qianjin; Liu Yingkai; Cai Wude; Yang Zhikun


Archive | 2017

Method for computing transition metal oxide energy band structure

Wang Qianjin; Tan Qiuhong; Liu Yingkai


Archive | 2017

Pentacene thin film transistor based on room temperature preparation of nitrogen hafnium -oxide gate insulation layer

Tan Qiuhong; Wang Qianjin; Liu Yingkai; Wang Yi; Cai Wude; Yang Zhikun


Archive | 2016

Based on hafnium -oxide defect regulation and control layer graphite alkene ferroelectric memory ware

Tan Qiuhong; Wang Qianjin; Liu Yingkai; Cai Wude; Yang Zhikun


Archive | 2016

Based on perovskite double grid carbon nanotube iron electrical storage

Tan Qiuhong; Wang Qianjin; Liu Yingkai; Yang Zhikun; Luo Wenping; Tan Qiuyan


Journal of Yunnan Normal University | 2012

Preparation and Characterization of Tin Oxide Nanowires

Liu Yingkai

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Tan Qiuhong

Yunnan Normal University

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Wang Qianjin

Yunnan Normal University

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De-Peng Yu

Yunnan Normal University

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Hou Dedong

Yunnan Normal University

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Zhang Ying

Yunnan Normal University

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