Liwei Cheng

Room-temperature continuous-wave quantum cascade lasers grown by MOCVD without lateral regrowth

We report on room-temperature continuous-wave (CW) operation of lambda~8.2 mum quantum cascade lasers grown by metal-organic chemical vapor deposition without lateral regrowth. The lasers have been processed as double-channel ridge waveguides with thick electroplated gold. CW output power of 5.3 mW is measured at 300 K with a threshold current density of 2.63 kA/cm2. The measured gain at room temperature is close to the theoretical design, which enables the lasers to overcome the relatively high waveguide loss

A room-temperature semiconductor spaser operating near 1.5 μm

Room temperature spasing of surface plasmon polaritons at 1.46 μm wavelength has been demonstrated by sandwiching a gold-film plasmonic waveguide between optically pumped InGaAs quantum-well gain media. The spaser exhibits gain narrowing, the expected transverse-magnetic polarization, and mirror feedback provided by cleaved facets in a 1-mm long cavity fabricated with a flip-chip approach. The 1.06-μm pump-threshold of ~60 kW/cm2 is in good agreement with calculations. The architecture is readily adaptable to all-electrical operation on an integrated microchip.

Midinfrared semiconductor optical metamaterials

We report on a novel class of semiconductor metamaterials that employ a strongly anisotropic dielectric function to achieve negative refraction in the midinfrared region of the spectrum, ∼8.5–13 μm. We present two types of metamaterials, layered highly doped/undoped heterostructures and quantum well superlattices that are highly anisotropic. Contrary to other optical metamaterials these heterostructure systems are optically thick (up to 20 μm thick), planar, and require no additional fabrication steps beyond the initial growth. Using transmission and reflection measurements and modeling of the highly doped heterostructures, we demonstrate that these materials exhibit negative refraction. For the highly doped quantum well superlattices, we demonstrate anomalous reflection due to the strong anisotropy of the material but a determination of the sign of refraction is still difficult. This new class of semiconductor metamaterials has great potential for waveguiding and imaging applications in the long-wave inf...

Quantum cascade laser based standoff photoacoustic chemical detection

Standoff chemical detection with a distance of more than 41 feet using photoacoustic effect and quantum cascade laser (QCL) operated at relatively low power, less than 40 mW, is demonstrated for the first time. The option of using QCL provides the advantages of easy tuning and modulation besides the benefit of compact size, light weight and low power consumption. The standoff detection signal can be calibrated as a function of different parameters such as laser pulse energy, gas vapor concentration and detection distance. The results yield good agreements with theoretical model. Techniques to obtain even longer detection distance and achieve outdoor operations are in the process of implementation and their projection is discussed.

Room-temperature operation of 3.6 μm In0.53Ga0.47As/Al0.48In0.52As quantum cascade laser sources based on intracavity second harmonic generation

We discuss a design of short-wavelength quantum cascade laser sources based on intracavity second harmonic generation. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasiphase matching. We demonstrate operation of λ≈3.6 μm lattice-matched InGaAs/AlInAs/InP sources with approximately 6 μW of second-harmonic output at room temperature and conversion efficiency of approximately 130 μW/W2. Threshold current densities of devices with a nonlinear section were similar to that of the reference lasers without the nonlinear section.

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

We investigated the effect of deep-etched mesa sidewall profile and oxide overhang length on the regrowth structural characteristics for buried- heterostructure (BH) quantum cascade lasers (QCLs) grown by metalorganic chemical vapor deposition (MOCVD). The relationship between etched mesa sidewall geometry, oxide overhang length, oxide thickness, and growth uniformity was examined and is extensively discussed. In particular, anomalous growth in the vicinity of the oxide edge resulting from insufficient oxide overhang length was identified and studied. An ideal ratio of mesa height to oxide overhang length between 2.5 and 3.0 is proposed and experimentally justified to yield satisfactory planar regrowths without anomalous growth. Mesas in the

Temperature Dependence of Optical Gain and Loss in

[ 0 1\overline{ 1} ]

8.2–10.2

direction with smoothly etched entrant profile yield a higher degree of growth uniformity than mesas in the [011] direction with the re-entrant profile.