Lon A. Porter
Purdue University
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Featured researches published by Lon A. Porter.
MRS Proceedings | 2007
Daniel S. Albrecht; Jacob T. Lee; Nick Molby; Steven D. Rhodes; Hieu Minh Dam; Jason L. Siegel; Lon A. Porter
Successfully meet the multifaceted challenges of facilitating learning in the undergraduate chemistry curriculum, both in the classroom and in the research laboratory. Cardinal goals include the development of an engaging learning environment, aggressive undergraduate research program, new courses (i.e. Chemical Nanotechnology, Industrial Inorganic Chemistry, Materials Chemistry, Forensic Chemistry, and Chemistry, Business, and Public Policy), and evolving established classes to keep pace with the rapidly expanding scope of chemistry, with emphasis on the wider, significant interaction of chemistry with other realms of science, technology, business, and public policy.
MRS Proceedings | 2002
J. M. Schmeltzer; Lon A. Porter; Michael P. Stewart; Carmen M. López; Jillian M. Buriak
Efforts to produce stable, derivatized porous silicon have yielded a number of chemical methods capable of functionalizing this interesting material with organic monolayers. Hydrideterminated porous silicon substrates react with alkenes and alkynes in the presence of dilute triphenylcarbenium salt solutions to respectively produce alkyl- and alkenyl-functionalized materials. Characterization by transmission FTIR and solid-state NMR suggests the formation of highly stable silicon-carbon bonds to yield covalently bound organic moieties. Porous silicon passivated in this fashion exhibits a greater resistance than that of the native material to chemical degradation, indicating that the organic functionalities may serve to sterically shield the nanocrystallites from nucleophiles. Hydrosilylation is proposed to proceed via hydride
MRS Proceedings | 2002
Lon A. Porter; Hee Cheul Choi; Alexander E. Ribbe; Jillian M. Buriak
Precious metals are choice materials for a myriad of applications due their high electrical conductivity, resistance to corrosion, and ligand binding specificity. Indispensable in modern electronics fabrication, precious metals also enjoy widespread use as catalysts, support substrates, and sensor elements. Recent progress towards metallization on diminishing size regimes has imposed increasingly stringent demands upon thin film preparation methodologies. Metallization techniques employed in ultra large scale integration (ULSI) device fabrication, nanoelectromechanical systems (NEMS), and arrayed nanosensors will require unparalleled control of surface morphology, deposition rate, and substrate adhesion without sacrificing throughput or cost effectiveness. Furthermore, precious metal films of this type are essential for fundamental investigations aimed at elucidating the intricate nature of interfacial topics ranging from self-assembled monolayers (SAMs) to heterogeneous catalysis. In contrast to complex and expensive vacuum methods of metallization, research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Thin and thick films of gold, platinum, and palladium nanoparticles have been prepared as a result of the immersion of germanium and gallium arsenide substrates into dilute, aqueous solutions of tetrachloraurate (III), tetrachloroplatinate (II), and tetrachloropalladate (II), respectively. This methodology yields nanostructured precious metal films with control over surface morphology and deposition rate. Moreover, metal films prepared in this manner exhibit excellent adhesion to the underlying semiconductor substrate. The resultant films were characterized utilizing scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and scanning probe microscopy (SPM). This method provides for the facile interfacing of metal nanostructures with group (IV) and III-IV compound semiconductor surfaces.
MRS Proceedings | 2002
Lon A. Porter; Hee Cheul Choi; J. M. Schmeltzer; Alexander E. Ribbe; Jillian M. Buriak
Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ultra large scale integration (ULSI) device fabrication, nanoelectromechanical systems (NEMS), and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. This method provides for the facile interfacing of metal nanoparticles with a group (IV) and III-IV compound semiconductor surfaces. Morphologically complex films composed of gold, platinum, and palladium nanoparticles have been prepared as a result of the immersion of germanium and gallium arsenide substrates into dilute, aqueous solutions of tetrachloraurate (III), tetrachloroplatinate (II), and tetrachloropalladate (II), respectively. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. This facile electroless deposition methodology provides an alternative to complex and expensive vacuum methods of metallization, yet allows for the preparation of both thin and thick nanostructured films with control over surface morphology and deposition rate. Furthermore, precious metal films prepared in this way exhibit excellent adhesion to the underlying semiconductor substrate. The resultant films were characterized utilizing scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and scanning probe microscopy (SPM). In order to apply this novel metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing (µCP), and scanning probe nanolithography (SPN) has been demonstrated.
Langmuir | 1998
Lon A. Porter; David Ji; Sarah L. Westcott; Michael Graupe; Roman S. Czernuszewicz; and Naomi J. Halas; T. Randall Lee
Nano Letters | 2002
Lon A. Porter; Hee Cheul Choi; and Alexander E. Ribbe; Jillian M. Buriak
Nano Letters | 2002
Lon A. Porter; Hee Cheul Choi; J. M. Schmeltzer; Alexander E. Ribbe; and Lindsay C. C. Elliott; Jillian M. Buriak
Langmuir | 2002
J. M. Schmeltzer; Lon A. Porter; Michael P. Stewart; Jillian M. Buriak
Small | 2005
Mohammad R. Hormozi Nezhad; Masato Aizawa; Lon A. Porter; Alexander E. Ribbe; Jillian M. Buriak
Nano Letters | 2003
Lon A. Porter; and Alexander E. Ribbe; Jillian M. Buriak