Long-Jing Yin

Direct imaging of topological edge states at a bilayer graphene domain wall

The AB–BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Although it has been extensively studied in theory, a direct imaging of its topological edge states is still missing. Here we image the topological edge states at the graphene bilayer domain wall by using scanning tunnelling microscope. The simultaneously obtained atomic-resolution images of the domain wall provide us unprecedented opportunities to measure the spatially varying edge states within it. The one-dimensional conducting channels are observed to be mainly located around the two edges of the domain wall, which is reproduced quite well by our theoretical calculations. Our experiment further demonstrates that the one-dimensional topological states are quite robust even in the presence of high magnetic fields. The result reported here may raise hopes of graphene-based electronics with ultra-low dissipation.

Scanning Tunneling Microscopy of the .PI. Magnetism of a Single Carbon Vacancy in Graphene

The pristine graphene is strongly diamagnetic. However, graphene with single carbon atom defects could exhibit paramagnetism with local magnetic moments ~ 1.5 per vacancy1-6. Theoretically, both the electrons and electrons of graphene contribute to the magnetic moment of the defects, and the pi magnetism is characterizing of two spin-split DOS (density-of-states) peaks close to the Dirac point1,6. Since its prediction, many experiments attempt to study this pi magnetism in graphene, whereas, only a notable resonance peak has been observed around the atomic defects6-9, leaving the pi magnetism experimentally so elusive. Here, we report direct experimental evidence of the pi magnetism by using scanning tunnelling microscope. We demonstrate that the localized state of the atomic defects is split into two DOS peaks with energy separations of several tens meV and the two spin-polarized states degenerate into a profound peak at positions with distance of ~ 1 nm away from the monovacancy. Strong magnetic fields further increase the energy separations of the two spin-polarized peaks and lead to a Zeeman-like splitting. The effective g-factors geff around the atomic defect is measured to be about 40. Such a giant enhancement of the g-factor is attributed to the strong spin polarization of electron density and large electron-electron interactions near the atomic vacancy.

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors

A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.

Landau quantization in graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface

Electronic properties of surface areas decoupled from graphite are studied using scanning tunnelling microscopy and spectroscopy. We show that it is possible to identify decoupled graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface according to their tunnelling spectra in high magnetic field. The decoupled monolayer and bilayer exhibit Landau quantization of massless and massive Dirac fermions, respectively. The substrate generates a sizable band gap, ~35 meV, in the Bernal bilayer, therefore, the eightfold degenerate Landau level at the charge neutrality point is split into two valley-polarized quartets polarized on each layer. In the decoupled Bernal trilayer, we find that both massless and massive Dirac fermions coexist and its low-energy band structure can be described quite well by taking into account only the nearest-neighbor intra- and interlayer hopping parameters. A strong correlation between the Fermi velocity of the massless Dirac fermions and the effective mass of the massive Dirac fermions is observed in the trilayer. Our result demonstrates that the surface of graphite provides a natural ideal platform to probe the electronic spectra of graphene layers.

Detecting giant electron-hole asymmetry in a graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy

The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunneling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in a graphene monolayer. In our experiment, the Fermi velocities of electrons

Landau quantization and Fermi velocity renormalization in twisted graphene bilayers

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Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer

and holes

Experimental observation of surface states and Landau levels bending in bilayer graphene

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Direct probing of the stacking order and electronic spectrum of rhombohedral trilayer graphene with scanning tunneling microscopy

are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the

Spatially resolving unconventional interface Landau quantization in a graphene monolayer-bilayer planar junction

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