Long Lv

Resistance switching behavior and ferroelectric properties of the Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.97− x Mn 0.03 Zn x O 3 thin films

Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03ZnxO3 (BHSFMZnxO) thin films were prepared by a chemical solution deposition method on the fluorine doped tin oxide (FTO) substrates. The effects of Sr, Ho, Mn and Zn co-doping on the crystal structure, defects, leakage current, resistance switching behavior and ferroelectric properties of the BiFeO3 films were investigated. The results show that Zn2+ doped BHSFMO films lead to the transformation of the preferred orientation from (110) to (100). The oxygen vacancies,

Ferroelectric properties of BiFeO 3 thin films by Sr/Gd/Mn/Co multi-doping

{(Zn{prime _{Fe}} - V_{O}^{{ cdot cdot }})^ cdot },

Multiferroic properties of Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.97-x Mn 0.03 Ni x O 3 thin films modulated by F–N tunneling effects

(Zn′Fe-VO··)·, leakage current density and the Schottky barrier of BHSFMZnxO films were increased with the increase of Zn2+ doping. The BHSFMZn0.04O film shows the highest resistance switching ratio (18.6) at 200xa0kV/cm. The BHSFMZn0.01O film have larger remanent polarization and switching current (Pr ~ 135xa0µC/cm2 and IS ~u20091.5xa0mA), and the relatively low coercive field and the polarization leakage current (Ec ~u2009350xa0kV/cm and IL ~u20090.14xa0mA). Therefore, the resistance switching behavior or ferroelectric properties can be obtained by controlling the doping amount of Zn2+.