Longfei Mi

In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High‐Speed Visible–Near‐Infrared Photodetectors

c2D transition metal dichalcogenides (TMDCs)-based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n-MoS2/n-silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible-near-infrared light with responsivity up to 11.9 A W(-1). Notably, the photodetector shows high-speed response time of ≈ 30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS2 /Si homotype heterojunction have great potential application in the field of visible-near-infrared detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.

A water–ethanol phase assisted co-precipitation approach toward high quality quantum dot–inorganic salt composites and their application for WLEDs

A green and efficient synthesis of aqueous CdTe quantum dots (QDs) embedded in inorganic salt enabled by co-precipitation is demonstrated, providing a new type of solid-state conversion material with emission colors covering green to red spectral regions. CdTe QDs were synthesized in the water phase, followed by incorporation into inorganic salt with the assistance of ethanol. Due to the protection of the tight matrix, the resulting composites exhibit good stability and processability as well as high photoluminescence properties. A white light emitting diode (WLED) applying the composites as a red color conversion layer with good luminescence properties is also fabricated, suggesting the promising application of the composites in solid-state lighting systems.

Preparation of highly luminescent BaSO4 protected CdTe quantum dots as conversion materials for excellent color-rendering white LEDs

The incorporation of colloidal CdTe quantum dots into an inorganic matrix, BaSO4, through a handy and rapid co-precipitation method is demonstrated for the first time. Owing to the protection of the BaSO4 matrix, the resulting composites show stronger luminescence, longer fluorescent lifetime, and higher photo- and thermal stability as well as being more anti-acid compared to the parental CdTe QDs. Moreover, the composites hold several advantages for industrial applications. White light-emitting diodes (WLEDs) utilizing the composites as a red color conversion layer are fabricated, and produce bright white light with high color-rendering properties including a CIE coordinate of (0.34, 0.33), an Ra of 88, and a Tc of 5112 K at 20 mA, suggesting their great potential application in a solid-state lighting system with high color-rendering properties.

Solution assembly MoS2 nanopetals/GaAs n–n homotype heterojunction with ultrafast and low noise photoresponse using graphene as carrier collector

MoS2, the classical representative of layered structure transition metal dichalcogenides (TMDCs), has been widely used as an ideal n-type semiconductor, offering an interesting opportunity to construct heterostructures with other 2D layered or 3D bulk materials for ultrafast optoelectronic applications. In this work, we report the synthesis of ultrathin MoS2 nanopetals via a solution-processable route, and the solution assembly of a 2D MoS2 nanopetal/GaAs n–n homotype heterojunction using graphene as the carrier collector. The fabricated devices have excellent photoresponse characteristics including a good detectivity of ∼2.28 × 1011 Jones, a noise current approaching 0.015 pA Hz−1/2 at zero bias and notably a very fast response speed, up to ∼1.87/3.53 μs with a broad photoresponse range. More interestingly, the device could respond to fast pulsed illumination up to 1 MHz, far exceeding the performance of many current congeneric 2D nanostructured and solution-processable photodetectors reported. These results suggest that our devices, together with the solution assembly methodology of the device described herein, can be utilized to give large-scale integration of low-cost, high-performance photodetectors, thus opening up new possibilities for 2D layered material-based photovoltaic and optoelectronic applications in the future.

PbS Quantum-Dot Depleted Heterojunction Solar Cells Employing CdS Nanorod Arrays as the Electron Acceptor with Enhanced Efficiency

Depleted heterojunction (DH) solar cells have shown great potential in power conversion. A 3-D DH structure was first designed and fabricated through a layer-by-layer spin-coating technique to increase the interfacial contact of p-type PbS quantum dots (QDs) and n-type CdS nanorod arrays. As a result, a decent power conversion efficiency of 4.78% in this structure was achieved, which is five times the efficiency of a planar heterojunction structure of a similar thickness. In the 3-D DH structure, n-type CdS nanorod arrays (NRs) were grown vertically as electron acceptors, on which p-type PbS quantum dots were deposited as absorbing materials in a layer-by-layer spin-coating fashion. The results are discussed in view of effective transportation of electrons through CdS NRs than the hopping transportation in large nanoparticle-based CdS film, the enlarged interfacial area, and shortened carrier diffusion distance.

High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ∼0.8 μs/3.2 μs. They also show excellent rectification ratios up to 104 with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 1012 Jones and low noise currents <1 pAHz-1/2. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.

Strong damping of the localized surface plasmon resonance of Ag nanoparticles by Ag2O

By studying oxidation of AgNPs (Ag nanoparticles) and decomposition of the produced silver oxide, we demonstrate that the localized surface plasmon resonance (LSPR) of AgNPs was damped by Ag2O produced during oxygen plasma irradiation (OPI). The AgNPs were fabricated by evaporation of high pure silver under high vacuum. The oxidation was conducted in oxygen plasma generated by radio frequency glow discharging in vacuum, and the decomposition was performed by annealing the silver oxide in nitrogen ambient at temperatures ranging from room temperature to 450 °C. Samples were characterized by color, absorption spectra, surface enhanced Raman scattering, x-ray photoelectron spectroscopy, and field emission scanning electron microscopy. The bandgap of the silver oxide was calculated. We propose that AgNPs are only partially oxidized into silver oxide during OPI, and the LSPR of the AgNPs left without being oxidation is strongly damped by the produced silver oxide. This LSPR damping is responsible for the transparency of the sample after OPI for 2 s.

Simulation-Based Optical Spectra Analyses and Synthesis of Highly Monodispersed Mn-Doped ZnSe Nanocrystal

Geometrical structures of (ZnSe)n, n=3x, (x= 1–4) and (MnxZn2xSe3x), (x=1−4) clusters were calculated using density functional theory (DFT). Optical/absorption spectra, Raman spectra, HOMO–LUMO gap energy and binding energy of each cluster were calculated. The calculated results show the red shift of the optical/absorption spectra band caused by the manganese atoms doped in ZnSe clusters, and the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO–LUMO) gap energy value is decreased. Furthermore, we realized highly monodispersed manganese-doped zinc selenide quantum dots (Mn:ZnSe d-dots) experimentally by using a convenient route. The as-synthesized Mn:ZnSe d-dots were characterized by UV-Vis absorption, photoluminescence (PL), X-ray diffraction (XRD), TEM and HRTEM. The experimental results revealed that the as-prepared Mn:ZnSe d-dots with zinc-blende structure have an average size of about 3.9 nm.