Loren C. Betts

Extension of X-parameters to include long-term dynamic memory effects

A new unified theory and methodology is presented to characterize and model long-term memory effects of microwave components by extending the Poly-Harmonic Distortion (PHD) Model to include dynamics that are identified from pulsed envelope X-parameter measurements on an NVNA. The model correctly predicts the transient RF response to time-varying RF excitations including the asymmetry between off-to-on and on-to-off switched behavior as well as responses to conventional wide-bandwidth communication signals that excite long-term memory effects in power amplifiers. The model is implemented in the ADS circuit envelope simulator.

Measurement-based large-signal simulation of active components from automated nonlinear vector network analyzer data via X-parameters

Predictable measurement-based large-signal design has been demonstrated with a unique set of interoperable commercially available nonlinear technologies for measurement, simulation, and design of nonlinear components. The new NVNA instrument, automated X-parameter measurements and extraction, and auto-configurable compiled PHD component in ADS, together enable design of nonlinear circuits entirely from fully calibrated nonlinear component data.

Vector and harmonic amplitude/phase corrected multi-envelope stimulus response measurements of nonlinear devices

This paper describes a novel nonlinear measurement instrument based on a vector and amplitude/phase corrected network analyzer with integrated pulse multi-envelope measurement capabilities. The instrument provides pulse envelope domain measurements at isolated fundamental and harmonic responses (10 MHz to 26.5 GHz) from a nonlinear device to a time domain resolution of less than 20 nanoseconds. The instrument allows one to analyze the dynamic envelope behavior of the device at the fundamental and harmonic responses. Measurement results illustrate nonlinear device long and short term memory behavior from active devices. The resulting measurement results may be used to generate nonlinear mathematical models taking into account long and short term memory effects.

X-Parameter: Das neue Paradigma zur Beschreibung nichtlinearer HF- und Mikrowellenbauelemente

Zusammenfassung Zur Beschreibung nichtlinearer hochfrequenter Bauelemente wie Mischer oder Verstärker reichen herkömmliche Größen wie S-Parameter nicht aus. Wir zeigen, wie sich das Großsignalverhalten solcher Bauelemente, die Arbeitspunktabhängigkeit ihrer Eigenschaften und ihre Erzeugung neuer Frequenzanteile mit Hilfe so-genannter X-Parameter wiedergeben lassen. Das Verfahren wird an mehreren Beispielen demonstriert. Abstract Non-linear RF devices such as mixers or amplifiers cannot be described in sufficient detail by common quantities such as S-parameters. We show how the large-signal characteristics of such devices, the influence of the operating point on their characteristics, and the generation of new frequency components can be modeled by the so-called X-parameters. The approach is demonstrated by way of several examples.