Louay Eldada

Copper Indium Gallium Selenide photovoltaic modules manufactured by reactive transfer

In recent years, thin-film photovoltaic companies, especially First Solar with its CdTe technology, managed to realize the low manufacturing cost potential and to grab an increasingly larger market share. Copper Indium Gallium Selenide is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, and a fast high-quality CIGS reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable print plates in the first stage, while in the second stage, the CIGS layer is formed by rapid heating with Se confinement. High quality CIGS films with large grains have been demonstrated on the production line. With 14% cell efficiency and 12% module efficiency, HelioVolt started to commercialize the process on its first 20 MW production line.

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Rapid reactive transfer printing of CIGS photovoltaics

We demonstrate photovoltaic integrated circuits (PVIC) with high-quality large-grain Copper Indium Gallium Selenide (CIGS) obtained with the unique combination of low-cost ink-based or Physical Vapor Deposition (PVD) based nanoengineered precursor thin films and a reactive transfer printing method. Reactive transfer is a two-stage process relying on chemical reaction between two separate precursor films to form CIGS, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are brought into intimate contact and rapidly reacted under pressure in the presence of an electrostatic field while heat is applied. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. High quality CIGS with large grains on the order of several microns, and of preferred crystallographic orientation, are formed in just several minutes based on compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% have been achieved using this method. When atmospheric pressure deposition of inks is utilized for the precursor films, the approach additionally provides further reduced capital equipment cost, lower thermal budget, and higher throughput.

Field assisted simultaneous synthesis and transfer FASST ® method used in conjunction with liquid precursors to produce CIGS solar cells

Field assisted simultaneous synthesis and transfer FASST method is used in conjunction with liquid precursors to produce CIGS solar cells. Performance of CIGS cells using liquid precursors is on par with the performance of cells produced from PVD precursors. The FASST process has yielded up to 14% efficiency devices.

Development and manufacture of reactive-transfer-printed CIGS photovoltaic modules

In recent years, thin-film photovoltaic (PV) companies started realizing their low manufacturing cost potential, and grabbing an increasingly larger market share from multicrystalline silicon companies. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, high-quality CIGS grains, and a fast reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable print plates in the first stage, while in the second stage, the CIGS layer is formed by rapid heating with Se confinement. High quality CIGS films with large grains were produced on a full-scale manufacturing line, and resulted in high-efficiency large-form-factor modules. With 14% cell efficiency and 12% module efficiency, HelioVolt started to commercialize the process on its first production line with 20 MW nameplate capacity.

Nanoengineered CIGS thin films for low cost photovoltaics

Low cost manufacturing of Cu(In,Ga)Se2 (CIGS) films for high efficiency photovoltaic devices by the innovative Field-Assisted Simultaneous Synthesis and Transfer (FASST®) process is reported. The FASST® process is a two-stage reactive transfer printing method relying on chemical reaction between two separate precursor films to form CIGS, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage these precursors are brought into intimate contact and rapidly reacted under pressure in the presence of an applied electrostatic field. The method utilizes physical mechanisms characteristic of anodic wafer bonding and rapid thermal annealing, effectively creating a sealed micro-reactor that ensures high material utilization efficiency, direct control of reaction pressure, and low thermal budget. The use of two independent ink-based or PVD-based nanoengineered precursor thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the second stage FASST® synthesis of CIGS. High quality CIGS with large grains on the order of several microns are formed in just several minutes based on compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 12.2% have been achieved using this method.

FASST Reactive Transfer Printing for Morphology and Structural Control of Liquid Precursor Based Inorganic Reactants

Field-Assisted Simultaneous Synthesis and Transfer ( FASST ® ) process offers a controllable and cost-effective method to produce Copper Indium Gallium Selenide (CIGS) films for high efficiency photovoltaic devices. In the first stage of the two-stage FASST ® process two separate precursor films are formed, one deposited on the substrate and the other on a reusable printing plate. In the second stage, the precursors are brought into intimate contact and rapidly reacted under pressure in the presence of an applied electrostatic field, effectively creating a sealed micro-reactor that ensures high material utilization efficiency, direct control of reaction pressure, and low thermal budget. The unique ability to control both precursor films independently allows for composition and deposition technique optimization, eliminating pre-reaction prior to the synthesis of CIGS. This flexibility has proven immensely valuable as is demonstrated in the results of depositing the two-reactant films by various combinations of low-cost solution-based and conventional vacuum-based physical vapor deposition techniques, producing in several minutes high quality “hybrid” CIGS with large grains on the order of several microns. Cell efficiencies as high as 12.2% have been achieved using the FASST ® method.