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Louis G. Casagrande

California Institute of Technology

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Publication

Featured researches published by Louis G. Casagrande.

Applied Physics Letters | 1990

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Bruce J. Tufts; Louis G. Casagrande; Nathan S. Lewis; Frank J. Grunthaner

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.

Nature | 1987

Chemical modification of n-GaAs electrodes with Os3+ gives a 15% efficient solar cell

Bruce J. Tufts; Ian L. Abrahams; Patrick G. Santangelo; Gail N. Ryba; Louis G. Casagrande; Nathan S. Lewis

The Journal of Physical Chemistry | 1989

Studies of the n-GaAs/KOH-Se sub 2 sup 2 minus -Se sup 2 minus semiconductor/liquid junction

Bruce J. Tufts; Ian L. Abrahams; Louis G. Casagrande; Nathan S. Lewis

Journal of Physical Chemistry B | 2000

Photoelectrochemical Behavior of n-GaAs and n-AlxGa1-xAs in CH3CN

Louis G. Casagrande; and Agnes Juang; Nathan S. Lewis

The Journal of Physical Chemistry | 1991

Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-Al sub x Ga sub 1 minus x As/CH sub 3 CN-Ferrocene sup +/0 and n-Al sub x Ga sub 1 minus x As/KOH-Se sup minus /2 minus (aq) junctions

Louis G. Casagrande; Bruce J. Tufts; Nathan S. Lewis

The Journal of Physical Chemistry | 1988

Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se−/2−, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

Sharon R. Lunt; Louis G. Casagrande; Bruce J. Tufts; Nathan S. Lewis

Journal of the American Chemical Society | 1985

Measurement of the activation barrier for carrier transport at n-gallium arsenide semiconductor/liquid junctions

Louis G. Casagrande; Nathan S. Lewis

Applied Physics Letters | 1990

Erratum: Correlations between the interfacial chemistry and current‐voltage behavior of n‐GaAs/liquid junctions [Appl. Phys. Lett. 57, 1242 (1990)]

Bruce J. Tufts; Louis G. Casagrande; Nathan S. Lewis; Frank J. Grunthaner

The Journal of Physical Chemistry | 1989

Studies of the n-GaAs/KOH−Se22−−Se2− semiconductor/liquid junction

Bruce J. Tufts; Ian L. Abrahams; Louis G. Casagrande; Nathan S. Lewis

New Journal of Chemistry | 1987

Opportunities in semiconductor photoelectrochemistry

Ian L. Abrahams; Louis G. Casagrande; Mark D. Rosenblum; Mary L. Rosenbluth; Patrick G. Santangelo; Bruce J. Tufts; Nathan S. Lewis

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Nathan S. Lewis

California Institute of Technology

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Bruce J. Tufts

California Institute of Technology

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Frank J. Grunthaner

Jet Propulsion Laboratory

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Mary L. Rosenbluth

Stanford University

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Patrick G. Santangelo

California Institute of Technology

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Gail N. Ryba

California Institute of Technology

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Mark D. Rosenblum

California Institute of Technology

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Sharon R. Lunt

California Institute of Technology

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and Agnes Juang

California Institute of Technology

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