Ľubica Stuchlíková

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Abstract This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

Through ICT and new pedagogical approaches to skills for key enabling technologies

This article deals with the issue of Key Enabling Technologies (KETs), representing a basis for innovative approaches shifting to a greener economy and Europes industrial modernisation. Requirements to prepare university graduates as highly skilled KETs professionals, is are becoming more and more important. Facing this challenge authors see the solution in effective application of ICT and new pedagogical approaches.