Luis Vicente de Andrade Scalvi

Electro-optical properties of Er-doped SnO2 thin films

Abstract Photoconductivity of SnO 2 sol-gel films is excited, at low temperature, by using a 266 nm line—fourth harmonic—of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO 2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO 2 , the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay.

Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel

Transparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen.

Improved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique

Thin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2–3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improves the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg ≅ 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.

Preparation of TiO2/SnO2 Thin Films by Sol–Gel Method and Periodic B3LYP Simulations

Titanium dioxide (TiO2) thin films are grown by the sol-gel dip-coating technique, in conjunction with SnO2 in the form of a heterostructure. It was found that the crystalline structure of the most internal layer (TiO2) depends on the thermal annealing temperature and the substrate type. Films deposited on glass substrate submitted to thermal annealing until 550 °C present anatase structure, whereas films deposited on quartz substrate transform to rutile structure at much higher temperatures, close to 1000 °C, unlike powder samples where the phase transition takes place at about 780 °C. When structured as rutile, the oxide semiconductors TiO2/SnO2 have very close lattice parameters, making the heterostructure assembling easier. The SnO2 and TiO2 have their electronic properties evaluated by first-principles calculations by means of DFT/B3LYP. Taking into account the calculated band structure diagram of these materials, the TiO2/SnO2 heterostructure is qualitatively investigated and proposed to increase the detection efficiency as gas sensors. This efficiency can be further improved by doping the SnO2 layer with Sb atoms. This assembly may be also useful in photoelectrocatalysis processes.

Annealing effects on optical properties of natural alexandrite

Natural alexandrite (BeAl2O4:Cr3+) crystals are investigated as regards the effects of annealing on their optical properties. Optical absorption spectra are measured from the ultraviolet (190 nm) to the near infrared (900 nm), for a sample subjected to consecutive annealing processes, where time and temperature are varied. Besides this, luminescence spectra are simultaneously obtained for this sample, excited with a Kr+ laser source, tuned on an ultraviolet multi-line mode (337.5, 350.7 and 356.4 nm). We observe from absorption as well as from emission data that annealing mainly influences the distribution of Cr3+ and Fe3+ ions, located on sites of a mirror plane (Cs symmetry), which are responsible for the optical properties of alexandrite. The results obtained lead to the conclusion that annealing induces a modification of the population of Cr3+ on Cs sites as well as on sites located on an inversion plane (Ci). Annealing could improve the optical properties of this material, as regards its application as a tunable laser.

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO2/Al2O3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO2, deposited by sol-gel-dip-coating technique, and Al thermally annealed in O2-rich atmosphere, leads to fair insulation when the number of aluminum oxide layers is 4, with 0.3% of the current lost through the gate terminal as leakage current. This insulation is not obtained for devices with alumina layer treated for long time, under room atmosphere, due to degradation of the insulating film and interfusion with the conduction channel even using Sb-doped SnO2. The annealing of Al deposited on soda-lime glass substrate leads also to the formation of a Si layer, crystallized at Substrate/Al2O3 interface. The conclusion is that for an efficient insulation the thermal annealing must be short and then, O2-rich atmospheres are preferred.

Er rare-earth ion incorporation in sol-gel SnO2

Er-doped SnO2 thin films and xerogels are obtained by sol-gel technique. In order to understand the Er³+ rare-earth ion activity in SnO2 matrix, a characterization of Er incorporation is done through emission and excitation spectra of xerogels, besides thin film electrical characterization. Effects to grain dimensions are also analyzed based on X-ray diffraction data showing the particle growth with annealing temperature and inhibition of this growth by Er doping. Electrical characterization results suggest that Er³+ has an acceptor-like character in SnO2, and that codoping with Yb³+ allows an energy transfer process Yb³+ ® Er³+.

Visible emission from Er-doped SnO2 thin films deposited by sol-gel

Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green). Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.

Luminescence of Eu 3+ in the thin film heterojunction GaAs/SnO 2

Eu3+ doped tin dioxide (SnO2) thin films are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly leads to interesting luminescent emission from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where the Eu3+ transitions are absent. In the heterojunction, the Eu3+ transitions are clearly identified and are similar to emission from samples in the form of pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions. This broad band is blue shifted as the thermal annealing temperature as well as the crystallite size increase. Although the size of nanocrystallites points toward quantum confinement, another cause of the detected broad band is more feasible: the electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

Nanoparticle characterization of Er-doped SnO2 pellets obtained with different pH of colloidal suspension

SnO2:2 at. %Er xerogel samples were obtained by sol-gel technique from colloidal suspensions with distinct pHs. The evaluation of critical regions inside the nanocrystallite is fundamental for the interpretation of the influence of pH on the emission data. In this way, the nanocrystal depletion layer thickness was obtained with the help of photoluminescence, Raman, X-ray diffraction, and field-emission gun scanning electron microscopy measurements. It was observed that acid suspensions (pH < 7) lead to high surface disorder in which a larger number of cross-linked bonds Sn-O-Sn among nanoparticles are present. For these samples, the nanoparticle depletion layer is larger as compared to samples obtained from other pH. Photoluminescence measurement in the near infrared region indicates that the emission intensity of the transition 4I13/2 → 4I15/2 is also influenced by the pH of the starting colloidal suspension, generating peaks more or less broadened, depending on location of Er3+ ions in the SnO2 lattice ...