Luiz Gustavo Cançado

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Raman characterization of defects and dopants in graphene

In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.

Double resonance Raman spectroscopy of single-wall carbon nanotubes

A review of double resonance Raman spectroscopy is presented. Non-zone centre phonon modes in solids can be observed in the double resonance Raman spectra, in which weak Raman signals appear in a wide frequency region and their combination or overtone modes can be assigned. By changing the excitation laser energy, we can derive the phonon dispersion relations of a single nanotube.

Raman Signature of Graphene Superlattices

When two identical two-dimensional periodic structures are superposed, a mismatch rotation angle between the structures generates a superlattice. This effect is commonly observed in graphite, where the rotation between graphene layers generates Moiré patterns in scanning tunneling microscopy images. Here, a study of intravalley and intervalley double-resonance Raman processes mediated by static potentials in rotationally stacked bilayer graphene is presented. The peak properties depend on the mismatch rotation angle and can be used as an optical signature for superlattices in bilayer graphene. An atomic force microscopy system is used to produce and identify specific rotationally stacked bilayer graphenes that demonstrate the validity of our model.

Group theory analysis of phonons in two-dimensional transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) have emerged as a new two-dimensional material’s field since the monolayer and few-layer limits show different properties when compared to each other and to their respective bulk materials. For example, in some cases when the bulk material is exfoliated down to a monolayer, an indirect-to-direct band gap in the visible range is observed. The number of layers N (N even or odd) drives changes in space-group symmetry that are reflected in the optical properties. The understanding of the space-group symmetry as a function of the number of layers is therefore important for the correct interpretation of the experimental data. Here we present a thorough group theory study of the symmetry aspects relevant to optical and spectroscopic analysis, for the most common polytypes of TMDCs, i.e., 2 Ha ,2 Hc and 1T ,a s af unction of the number of layers. Real space symmetries, the group of the wave vectors, the relevance of inversion symmetry, irreducible representations of the vibrational modes, optical activity, and Raman tensors are discussed.

Low Temperature Raman Study of the Electron Coherence Length near Graphene Edges

This paper reports the experimental determination of the phase-breaking length Lφ of conduction electrons in graphene using Raman spectroscopy. Based on the double-resonance model, we extract Lφ from the spatial dependence of the D band susceptibility χD near the graphene edge. By using prior knowledge of sample properties and the excitation point-spread function we are able to determine the spatial variation of the Raman susceptibilities with high accuracy, and the results reveal a phase-breaking length Lφ = 40nm near the graphene edge.We developed a novel optical defocusing method for studying spatial coherence of photoexcited electrons and holes near edges of graphene. Our method is applied to measure the localization l(D) of the disorder-induced Raman D band (∼1350 cm(-1)) with a resolution of a few nanometers. Raman scattering experiments performed in a helium bath cryostat reveal that as temperature is decreased from 300 to 1.55 K, the length l(D) increases. We found that the localization of the D band varies as 1/T(1/2), giving strong evidence that l(D) scales with the coherence length of photoexcited electrons near graphene edges.

Modulating the electronic properties along carbon nanotubes via tube-substrate interaction.

We study single wall carbon nanotubes (SWNTs) deposited on quartz. Their Raman spectrum depends on the tube-substrate morphology, and in some cases, it shows that the same SWNT-on-quartz system exhibits a mixture of semiconductor and metal behavior, depending on the orientation between the tube and the substrate. We also address the problem using electric force microscopy and ab initio calculations, both showing that the electronic properties along a single SWNT are being modulated via tube-substrate interaction.

Raman scattering study of the phonon dispersion in twisted bilayer graphene

AbstractBilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.

Two-Dimensional Molecular Crystals of Phosphonic Acids on Graphene

The synthesis and characterization of two-dimensional (2D) molecular crystals composed of long and linear phosphonic acids atop graphene is reported. Using scanning probe microscopy in combination with first-principles calculations, we show that these true 2D crystals are oriented along the graphene armchair direction only, thereby enabling an easy determination of graphene flake orientation. We have also compared the doping level of graphene flakes via Raman spectroscopy. The presence of the molecular crystal atop graphene induces a well-defined shift in the Fermi level, corresponding to hole doping, which is in agreement with our ab initio calculations.

Group theory for structural analysis and lattice vibrations in phosphorene systems

Group theory analysis for two-dimensional elemental systems related to phosphorene is presented, including (i) graphene, silicene, germanene, and stanene; (ii) their dependence on the number of layers; and (iii) their two possible stacking arrangements. Departing from the most symmetric D 1 6h graphene space group, the structures are found to have a group-subgroup relation, and analysis of the irreducible representations of their lattice vibrations makes it possible to distinguish between the different allotropes. The analysis can be used to study the effect of strain, to understand structural phase transitions, to characterize the number of layers, crystallographic orientation, and nonlinear phenomena.