Lukasz Cywinski

Ultrafast Quenching of Ferromagnetism in InMnAs Induced by Intense Laser Irradiation

Time-resolved magneto-optical Kerr spectroscopy of ferromagnetic InMnAs reveals two distinct demagnetization processes--fast (<1 ps) and slow (approximately 100 ps). Both components diminish with increasing temperature and are absent above the Curie temperature. The fast component rapidly grows with pump power and saturates at high fluences (>10 mJ/cm(2)); the saturation value indicates a complete quenching of ferromagnetism on a subpicosecond time scale. We attribute this fast dynamics to spin heating through p-d exchange interaction between photocarriers and Mn ions, while the approximately 100 ps component is interpreted as spin-lattice relaxation.

Electron spin decoherence in isotope-enriched silicon.

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times T2 have been measured in isotope-enriched silicon but come far short of the T2=2T1 limit. The effect of nuclear spins on T2 is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, 29Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon.

Lateral diffusive spin transport in layered structures

A one-dimensional (1D) theory of lateral spin-polarized transport is derived from the two-dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in-plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin-diffusion length for a wide range of materials.

Spin transference and magnetoresistance amplification in a transistor

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

Quantum dot spin qubits in silicon: Multivalley physics

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the interface potential, which gives rise to a valley-orbit coupling but the latter depends on the detailed structure of the interface and is generally unknown a priori. These facts motivate us to provide an extensive study of spin qubits in Si double quantum dots, accounting fully for the valley degree of freedom and assuming no prior knowledge of the valley-orbit coupling. For single-spin qubits, we analyze the spectrum of a multivalley double quantum dot, discuss the initialization of one qubit, identify the conditions for the lowest energy two-electron states to be a singlet and a triplet well separated from other states, and determine analytical expressions for the exchange splitting. For singlet-triplet qubits, we analyze the single-dot spectrum and initialization process, the double-dot spectrum, singlet-triplet mixing in an inhomogeneous magnetic field, and the peculiarities of spin blockade in multivalley qubits. We review briefly the hyperfine interaction in Si and discuss its role in spin blockade in natural Si, including intravalley and intervalley effects. We study the evolution of the double-dot spectrum as a function of magnetic field. We address briefly the situation in which the valley-orbit coupling is different in each dot due to interface roughness. We propose a new experiment for measuring the valley splitting in a single quantum dot. We discuss the possibility of devising other types of qubits in Si QDs, and the size of the intervaley coupling due to the Coulomb interaction.

Spectroscopy of cross-correlations of environmental noises with two qubits

A single qubit driven by an appropriate sequence of control pulses can serve as a spectrometer of local noise affecting its energy splitting. We show that by driving and observing two spatially separated qubits, it is possible to reconstruct the spectrum of cross-correlations of noises acting at various locations. When the qubits are driven by the same sequence of pulses, real part of cross-correlation spectrum can be reconstructed, while applying two distinct sequence to the two qubits allows for reconstruction of imaginary part of this spectrum. The latter quantity contains information on either causal correlations between environmental dynamics at distinct locations, or on the occurrence of propagation of noisy signals through the environment. We illustrate the former case by modeling the noise spectroscopy protocol for qubits coupled to correlated two-level systems. While entanglement between the qubits is not necessary, its presence enhances the signal from which the spectroscopic information is reconstructed.

Proposal of a spintronics-based polarization detector

Connection between spin orientation in semiconductors and optical selection rules has been exploited in spin LEDs (Fiederling et al., 1999), where the degree of luminescence polarization indicates the average spin of electrons injected into the diode. We present a proposal of a reciprocal device: a spin-based detector of circularly polarized light, in which the absorption occurs in the planar semiconductor (SC) structure

Amplification of the semiconductor spin valve effect by a third ferromagnetic metal terminal

We have put forth a theoretical proposition of a spin-valve like device, which is well-suited for integration with existing semiconductor-based electronics. The three-terminal design takes advantage of the diffusive character of transport in the SC channel, and all the modeling was done at room temperature, using conservative parameters. Our device can be used as a spin transistor, or as a building block of reprogrammable magnetic logic gate