Lyn M. Irving

Stable ZnO thin film transistors by fast open air atomic layer deposition

We report stable, high performance zinc oxide thin film transistors grown by an atmospheric pressure atomic layer deposition system. With all deposition and processing steps kept at or below 200°C, the alumina gate dielectric shows low leakage (below 10−8A∕cm2) and high breakdown fields. Zinc oxide thin film transistors in a bottom gate geometry yield on/off ratios above 108, near zero turn-on voltage, little or no hysteresis, and mobility greater than 10cm2∕Vs. With alumina passivation, shifts in threshold voltage under gate bias stress compare favorably to those reported in the literature.We report stable, high performance zinc oxide thin film transistors grown by an atmospheric pressure atomic layer deposition system. With all deposition and processing steps kept at or below 200°C, the alumina gate dielectric shows low leakage (below 10−8A∕cm2) and high breakdown fields. Zinc oxide thin film transistors in a bottom gate geometry yield on/off ratios above 108, near zero turn-on voltage, little or no hysteresis, and mobility greater than 10cm2∕Vs. With alumina passivation, shifts in threshold voltage under gate bias stress compare favorably to those reported in the literature.

P-16: Solution-Processed Zinc Oxide Thin-Film Transistors

Methods for producing zinc oxide thin-film transistors by solution processing were studied. One class of methods involves the use of zinc-acetate-based precursor solutions, while the other involves the use of preformed nanoparticles. Devices with reasonable transfer characteristics were obtained from both routes, exhibiting mobilities typically greater than 0.1 cm2/Vs.

Uniform ZnO Thin-Film Transistors by an Ambient Process

We have fabricated zinc oxide thin-film transistors using a novel ambient deposition process, with maximum temperature of 200degC. The TFTs deposited this way show sufficiently good properties to make them potentially applicable to OLED display backplanes.