M. A. Krivov

High temperature defects in electron irradiated semiconductors HgCdTe, PbSnTe

Abstract The peculiarities of defect formation in n - and p -type conductivity HgCdTe and PbSnTe crystals after electron irradiation (2 MeV, 300 K) up to 2 × 10 18 cm -2 are examined. It has been found that irradiation results in formation of n -type conductivity crystals with final parameters that are determined by the composition of initial samples. The annealing of radiation defects occurs in the 360–470 K temperature range. It has been believed that the change of HgCdTe, PbSnTe properties after electron irradiation at 300 K are connected with formation of radiation defects, including Te vacancies.

Electrical transport in H+-irradiated gallium arsenide

Abstract The electrical properties ϱ(D) and ϱ(T) of 5 MeV H+-irradiated GaAs have been investigated. Specimens of n- and p-GaAs after proton irradiation up to D ≲ 1015 H+ cm−2 have a high electrical resistivity (ϱ ⋍ 10 9 ω- cm at 300 K ) . At doses in excess 1015 H+ cm−2 the resistivity against dose ϱ(D) shows an “anomalyy” it decreases from ∼ 109ω-cm value for D ⋍ 10 15 H + cm −2 down to ∼ 10 2 ω- cm value for D ⋍ 2 × 10 17 H + cm −2 . All heavy H+-irradiated samples of GaAs near 300 K had P-type conductivity according to thermopower measurements. It is supposed that at low temperatures the conduction is by variable-range hopping in high proton damaged layers of GaAs.

Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt

The temperature dependences of the density, mobility, and lifetime of electrons, and the photoconductivity and cathodoluminescence spectra of gallium arsenide with different electron densities doped with germanium when single crystals are grown by the Czochralski method are investigated. An analysis of the scattering mechanism is given, and the acceptor and donor densities are determined. The acceptor-type capture levels are found from the temperature dependence of the electron lifetime. The results of a study of the cathodoluminescence spectra indicate the presence in the specimens of complex radiational recombination centers similar to germanium-atom complexes with inherent lattice defects.

Photoionization cross sections of E levels in electron-irradiated n-type GaAs

The spectral shape of the photoionization cross sections of E1-E3 levels and the low-energy part of the photoionization cross sections of E4, and E5 levels are determined. It has been shown that radiation defects with which these levels are associated are characterized by a strong lattice relaxation of magnitude ≈0.5 eV. The red absorption edge for these levels in p-type GaAs has been found to lie at photon energies greater than Eg (except, possibly, level E5).

Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities

The temperature dependence of the charge carrier concentration and mobility in n-type GaAs monocrystals doped jointly by Ge and isovalent In and Sb impurities is investigated. The observable charge carrier concentration and mobility changes in the GaAs:Ge:In and GaAs:Ge:Sb are compared with the corresponding characteristics in GaAs:Ge, and the change in properties along the ingots can be explained by the Ge impurity redistribution in the gallium and arsenic sublattices in the presence of an isovalent impurity.

Analysis of the transfer function of a nonlinear thin-film waveguide

The processes occurring in the up-conversion of a spatially modulated signal in a nonlinear thin-film waveguide are subjected to Fourier analysis. The conditions of parametric image transformation with increase in frequency using a multimode waveguide are determined.

Electrical properties of GaAs layers irradiated by H4 ions

AbstractThe quantitiesρ(D) andρ(T) are studied in n- and p-GaAs, irradiated at T = 300°K by H+ ions (5 MeV). It is shown that the resistance of lightly doped GaAs specimens increases from original values ofρ0 to

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

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