M. A. Slifkin
University of Salford
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Featured researches published by M. A. Slifkin.
Solid State Communications | 1992
A. Zegadi; M. A. Slifkin; M. Djamin; R. D. Tomlinson; H. Neumann
Abstract Photoacoustic spectra have been obtained at room temperature from n and p-type single crystals of CuInSe 2 grown from a near-stoichiometric melt by the vertical Bridgman technique. The spectra have been used to evaluate gap energies and also to establish ionisation energies for several deep defect-related energy states. The data reported here demonstrate that the photoacoustic technique is useful as a contact-less method of appraising the complex intrinsic defect populations which dominate the optoelectronic properties of this semiconducting compound.
Journal of Electronic Materials | 1991
R. D. Tomlinson; A.E. Hill; M. Imanieh; R.D. Pilkington; A. Roodbarmohammadi; M. A. Slifkin; M. V. Yakushev
The development of efficient thin-film solar cells based on CuInSe2 absorber layers has encouraged fundamental research on both thin films and single crystals of this chalcopyrite semiconducting compound. The resistance to radiation and ion bombardment is of technical importance particularly for a material which could find future applications in space photovoltaic power systems. In this paper results are described for an ion implantation study using CuInSe2 single crystal substrates. Oxygen, helium and neon implantations have produced significant changes in surface resistivity and photoconductivity. Also the near-surface regions ofn-type crystals have been type-converted top-type following ion implantation. It is apparent that the ion implantation process creates defects which affect surface state densities and recombination probabilities. In the case of oxygen there is an additional doping effect caused either by the introduction of acceptor states or by the reduction of the existing donor state population. Following implantation there appears to be an overall decrease in carrier recombination at the surface which leads to an enhanced photoconductive response.
Review of Scientific Instruments | 1994
A. Zegadi; M. A. Slifkin; R. D. Tomlinson
In this paper we describe the design of a high resolution near‐infrared photoacoustic spectrometer of the gas‐microphone type intended to be used for measuring impurity absorption spectra of semiconductors. Particular attention has been paid to the design of the photoacoustic cell to find the most suitable one, and as a result, several cells differing in geometry and materials have been investigated. We present results for the PA amplitude dependence on the modulating frequency for carbon black powder and some widely used semiconductors. The sensitivity of the spectrometer and its effectiveness in resolving active defect states existing in the subgap absorption spectra of semiconductors are demonstrated in both optically opaque and transparent thick and thin samples.
Thin Solid Films | 1993
A. Zegadi; D.M. Bagnall; A. Belattar; R.D. Pilkington; M. A. Slifkin; Arthur E. Hill; R. D. Tomlinson
Abstract Polycrystalline CuInSe 2 thin films grown by the three-source co-evaporation technique are assessed near their fundamental absorption edge with a high resolution photoacoustic spectrometer of the gas-microphone type. The results are presented for films differing in uniformity, composition and thickness. The effect of heat treatment in various ambients on the properties of these films have also been investigated using in addition to photoacoustic spectroscopy, X-ray diffraction, Rutherford backscattering spectroscopy and scanning electron microscopy.
Thin Solid Films | 1990
A. Al-Mohamad; C.W. Smith; I.S. Al-Saffar; M. A. Slifkin
Abstract The possibility of preparing useful electronic devices incorporating thin organic films between a semiconductor and a metal electrode has been demonstrated. Organic thin films from 200 to 300 nm in thickness have been deposited on n- and p-type silicon wafers using a plasma-ion beam technique. The current-voltage I–V characteristics of the devices display stable and reproducible rectifying properties and exhibit similar current-voltage parameters to those of pn junction diodes but with electrical breakdown voltages between 100 and 200 V. A combination of thermionic emission and space-charge-limited emission is thought to be the predominant conduction process in the forward bias condition. However, thermionic carrier generation and recombination within the silicon substrate is the operative process under reverse bias conditions.
Physica Status Solidi (a) | 1992
A. Zegadi; M. A. Slifkin; M. Djamin; A.E. Hill; R. D. Tomlinson
Crystal Research and Technology | 1991
M. A. Slifkin; A. Al‐Rahmani; M. Imanieh; R. D. Tomlinson; H. Neumann
Crystal Research and Technology | 1994
M. V. Yakushev; A. Zegadi; H. Neumann; P. A. Jones; A.E. Hill; R.D. Pilkington; M. A. Slifkin; R. D. Tomlinson
Crystal Research and Technology | 1993
A. Zegadi; H. Neumann; M. A. Slifkin; R. D. Tomlinson
Crystal Research and Technology | 1995
A. Zegadi; M. V. Yakushev; H. Neumann; M. A. Slifkin; R. D. Tomlinson