M. Acciarri

Thiocyanate-free cyclometalated ruthenium sensitizers for solar cells based on heteroaromatic-substituted 2-arylpyridines

The first examples of thiocyanate-free thiophene-substituted Ru(II) cyclometalated complexes, based on thiophene-derived 2-(2,4-difluorophenyl)pyridine ligands, are presented and investigated as photosensitizers in DSCs. Upon thiophene substitution the complexes presented enhanced optical properties compared to the reference dye with no thiophene substitution. DSCs based on the dithienyl-derived dye showed power conversion efficiencies up to 5.7%, more than twice that containing the complex without the thiophene substitution.

Key Success Factors and Future Perspective of Silicon-Based Solar Cells

Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV) modules are based on crystalline silicon (c-Si). PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

Effects of CdS buffer layers on photoluminescence properties of Cu2ZnSnS4 solar cells

Cu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21u2009eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075u2009eV and 0.85u2009eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

State of the Art and Perspectives of Inorganic Photovoltaics

In the last decade, the fast increase of the global energy consumption, mainly related to the strong economic growth in the Far East, and the progressive depletion of the fossil fuels induced a run-up in the world oil price. Both these economic concerns and the growing global pollution pointed out that a transition toward renewable energies is mandatory. Among renewables, the conversion of sunlight into electricity by photovoltaic (PV) devices is a reliable choice to cope the growing energy consumption, due to the huge potentially extractable power (up to 120000u2009TW). The most important classes of inorganic PV devices developed in the last sixty years will be reviewed in this paper, in order to depict the state of the art of the technologies which dominate the PV market. Some novel concepts which could have an important role in the future of PV will be also described.