M. Aslan

Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material

Abstract A novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO2 (300 nm) was thermally grown on p-Si wafer at 1000 °C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (μFET), excellent on/off ratio (Ion/Ioff), high transconductance (gm) and a small threshold voltage (VTh). The values of μFET, Ion/Ioff, gm and VTh were found as 5.02 cm2/Vs, 0.7 × 103, 5.64 μS/mm and 1.37 V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future.

Structural and electronic properties of InNxP1-x alloy in full range (0 ≤ x ≤1)

Abstract We have performed first-principles method to investigate structural and electronic properties of InNxP1−x ternary semiconductor alloy in full range (0 ≤ x ≤ 1) using density functional theory. We have used modified Becke–Johnson potential to obtain accurate band gap results. From the electronic band structure calculation we have found that InNxP1−x become metal between 47 and 80% of nitrogen concentration. Additional to our band gap calculations, we have also used the band anticrossing model. The band anticrossing model supplies a simple, analytical expression to calculate the physical properties, such as the electronic and optical properties, of III-NxV1−x alloys. The knowledge of the electron density of states is required to understand and clarify some properties of materials such as the band structures, bonding character and dielectric function. In order to have a deeper understanding of these properties of the studied materials, the total and partial density of states has been calculated. Finally, we have calculated the total bowing parameter b of studied alloys, together with three contributions bVD, bCE, and bSR due to volume deformation, different atomic electron negativities and structural relaxation, respectively.