M. B. Jost

Resonant inverse photoemission of Sb multilayers on GaAs(110) and InP(110) surfaces

The coverage‐ and structure‐dependent empty electronic states of Sb multilayers on nearly unrelaxed GaAs(110) and relaxed InP(110) have been investigated using inverse photoemission (IPES) and low energy electron diffraction. Two significant Sb‐derived empty states, termed features A and B, are used to characterize the evolution of ordered, metastable Sb multilayers and the ordered first monolayer. Feature A appears ∼0.30 and ∼0.35 eV above EF for ordered metastable Sb multilayers on p‐GaAs(110) and p‐InP(110), respectively, while feature B appears at 2.0 eV for 1 ML of ordered Sb. Feature A resonates for photon energies of IPES near ℏωp=15.9 eV because radiative decay of a plasmon within the Sb film provides a decay channel that competes with the inverse photoemission channel. This resonance occurs for thicknesses greater than ∼3.5 ML for GaAs(110) and ∼2 ML for InP(110) for overlayers annealed at 475 K following Sb growth at 300 K. Structural studies reveal that the resonance features of IPES are correl...