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Dive into the research topics where M. Barra is active.

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Featured researches published by M. Barra.


Materials horizons | 2015

Stem cell-compatible eumelanin biointerface fabricated by chemically controlled solid state polymerization†

Alessandro Pezzella; M. Barra; Anna Musto; Angelica Navarra; Michela Alfè; Paola Manini; Silvia Parisi; Antonio Cassinese; Valeria Criscuolo; Marco d'Ischia

Relying on the water-dependent hybrid conductor properties of eumelanin biopolymers, a structurally controlled melanin thin film that can be reversibly switched-on and off by hydration–dehydration cycles and used as a biocompatible platform for stem cell growth and differentiation up to 11 days is reported. A key feature of the new eumelanin-based bioelectronic interface is its remarkable structural regularity and integrity, as the result of an ad hoc fabrication protocol involving ammonia-induced solid state polymerization (AISSP) technology of a 5,6-dihydroxyindole thin film. The AISSP technology is operationally simple and versatile, enabling the preparation of device-quality thin films (AFM and MALDI-MS evidence) on various substrates with efficient chemical control over molecular complexity. Overall the results of this study pave the way for the implementation of tailored eumelanin thin films for bioelectronic devices, e.g., in organic electrochemical transistors (OECTs).


Applied Physics Letters | 2012

Very low bias stress in n-type organic single-crystal transistors

M. Barra; F. V. Di Girolamo; Nikolas Aron Minder; I. Gutiérrez Lezama; Zhihua Chen; Antonio Facchetti; Alberto F. Morpurgo; Antonio Cassinese

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using N,N′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ∼1% under vacuum and ∼10% in air. This remarkable stability of the devices leads to characteristic time constants τ, extracted by fitting the data with a stretched exponential—that are τ ∼ 2 × 109 s in air and τ ∼ 5 × 109 s in vacuum—approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.


Journal of Applied Physics | 2011

Matrix assisted pulsed laser deposition of melanin thin films

F. Bloisi; Alessandro Pezzella; M. Barra; F. Chiarella; Antonio Cassinese; L. Vicari

Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.


Journal of Applied Physics | 2009

Photoinduced long-term memory effects in n-type organic perylene transistors

M. Barra; F. Bloisi; Antonio Cassinese; F. V. Di Girolamo; L. Vicari

In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.


Journal of Applied Physics | 2007

Direct current and alternating current electrical transport properties of regioregular poly[3-(4-alkoxyphenyl)-thiophenes]

M. Barra; M. Biasiucci; Antonio Cassinese; P. D’Angelo; A. C. Barone; A. Carella; A. Roviello

In this paper, the direct current and alternating current (ac) electrical transport properties of doped and undoped regioregular poly[3-(4-alkoxyphenyl)-thiophenes], where the alkoxy groups are O-(CH2)n−1CH3 with n=1,4,6, and 8, have been investigated. The films have been synthesized by an experimental procedure based on the oxidation of 3-(4-alkoxylphenyl)-thiophenes with molecular oxygen in presence of VO(acac)2, as the catalyst. Unlike other examples reported in the literature, this approach allows obtaining well structured spin-coated films without the necessity of further processes, such as annealing or exposition to solvent vapors. Direct current-voltage measurements, performed in planar and transverse configuration on 1 μm thick films, show both ohmic and space charge limited current behavior, at low and high applied fields, respectively. Due to the film ordered structure, a significant electrical anisotropy was found. In order to deeply investigate the basic conduction mechanisms, ac measurements ...


Journal of Applied Physics | 2010

Bias stress instability in organic transistors investigated by ac admittance measurements

F. V. Di Girolamo; M. Barra; V. Capello; M. Oronzio; C. Romano; Antonio Cassinese

In this paper, the bias stress effect (BSE) in organic field-effect transistors has been analyzed by an alternative experimental approach based on ac admittance (Y=G+jωC) measurements. conductance (C) and capacitance (G) curves have been recorded as a function of frequency at different times of the bias stress experiments and simultaneously fitted through a transmission line circuit, able to separately model the conducting properties of the channel and contact regions. The determination of the time behavior of the model fitting parameters is assumed as the starting point for a quantitative analysis of the BSE occurrence. This experimental procedure clarifies that both channel resistance (Rch) and contact resistance (Rc) are largely affected by the BSE, while the channel capacitance (Cch), related to the charge accumulation sheet, and the contact capacitance (Cc) result almost unchanged.


Journal of Nanomaterials | 2012

Matrix-assisted pulsed laser thin film deposition by using Nd: YAG laser

F. Bloisi; M. Barra; Antonio Cassinese; L. Vicari

Matrix-Assisted Pulsed Laser Evaporation (MAPLE) is a deposition technique, developed from Pulsed Laser Deposition (PLD) especially well suited for producing organic/polymeric thin films, which can take advantage from using Nd:YAG laser. Depending on the relative values of light absorption coefficients of the solvent and of the molecules to be deposited, laser energy is directly absorbed by the solvent or is transferred to it, providing a softer desorption mechanism with respect to PLD. In PLD ultraviolet laser radiation is commonly used, but in MAPLE, since easily damaged molecules are usually involved, the use of Nd:YAG laser offers the advantage to allow selecting laser wavelength from ultraviolet (266nm or 355 nm, corresponding to 4.66 eV or 3.49 eV photon energies, resp.) to visible (532 nm, 2.33 eV) to infrared (1064 nm, 1.17 eV). In this paper, the MAPLE technique is described in details, together with a survey of current and possible future applications for both organic and biomaterial deposition taking into account the advantages of using an Nd:YAG laser. Beside other results, we have experimental confirmation that MAPLE applications are not limited to transparent molecules highly soluble in light absorbing solvent, thus allowing deposition of poorly soluble light absorbing molecules suspended in a light transparent liquid.


Journal of Materials Chemistry | 2005

Synthesis and characterization of La2−xBaxCuO4+δ thin film through a simple MOCVD approach

Graziella Malandrino; Giuseppe Condorelli; Ignazio L. Fragalà; Antonio Cassinese; M. Barra

Superconducting La2−xBaxCuO4+δ (LBCO) films have been deposited on 10 × 10 mm2 (100) LaAlO3 substrates using an in-situ MOCVD process and adopting the multi-component single source approach. Highly c-axis oriented films are fabricated and X-ray diffraction (XRD) (103) pole figures point to the epitaxial nature of the LBCO films. Scanning electron and atomic force microscopy images show highly homogeneous surfaces. Energy dispersive (EDX) and wavelength dispersive X-ray (WDX) analyses show a good homogeneity over all the 10 × 10 mm2 substrate and the absence of any F or C contaminations.


Applied Physics Letters | 2014

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

F. Chiarella; Tullio Toccoli; M. Barra; L. Aversa; Francesca Ciccullo; R. Tatti; Roberto Verucchi; Salvatore Iannotta; Antonio Cassinese

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN2) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm2/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.


Journal of Applied Physics | 2011

Electrical mobility in organic thin-film transistors determined by noise spectroscopy

C. Bonavolontà; C. Albonetti; M. Barra; M. Valentino

Organic field-effect transistors (OFET) based on both n-type (perylene derivative) and p-type (α-sexithiophene and pentacene) organic thin films are characterized using low-frequency noise spectroscopy to estimate the charge carrier mobility. The power spectral density shows that the exposure of OFET to air affects the thermal noise fluctuations and that the thermal noise RMS value depends on gate voltage. The power spectral density noise proves that the carrier mobility is gate-voltage dependent. Unlike the I-V measurements, the noise spectroscopy analysis demonstrates the dependence of the mobility on the carrier polarity. We discuss the charge mobility and transport mechanism of a pentacene device with and without electrodes functionalized by an octanethiol chain. The results show that in the functionalized device the carrier mobility is improved and does not depend on the high gate voltage.

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Antonio Cassinese

University of Naples Federico II

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F. Chiarella

University of Naples Federico II

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F. V. Di Girolamo

University of Naples Federico II

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Antonio Carella

University of Naples Federico II

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F. Bloisi

University of Naples Federico II

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L. Vicari

University of Naples Federico II

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Alessandro Pezzella

University of Naples Federico II

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Antonio Roviello

University of Naples Federico II

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Federico Chianese

University of Naples Federico II

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L. Parlato

University of Naples Federico II

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