M. C. Asensio

NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles.

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac π bands associated to the two stacked layers with respective twist angles in the range 1–3°. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped ‘few-layer’ graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology.

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

In recent years there has been growing interest in the electronic properties of ‘few layer’ graphene films. Twisted layers, different stacking and register with the substrate result in remarkable unconventional couplings. These distinctive electronic behaviours have been attributed to structural differences, even if only a few structural determinations are available. Here we report the results of a structural study of bilayer graphene on the Si-terminated SiC(0001) surface, investigated using synchrotron radiation-based photoelectron diffraction and complemented by angle-resolved photoemission mapping of the electronic valence bands. Photoelectron diffraction angular distributions of the graphene C 1s component have been measured at different kinetic energies and compared with the results of multiple scattering simulations for model structures. The results confirm that bilayer graphene on SiC(0001) has a layer spacing of 3.48u2009Å and an AB (Bernal) stacking, with a distance between the C buffer layer and the first graphene layer of 3.24u2009Å. Our work generalises the use of a versatile and precise diffraction method capable to shed light on the structure of low-dimensional materials.

Inorganic Ions Assisted the Anisotropic Growth of CsPbCl3 Nanowires with Surface Passivation Effect

All-inorganic halide perovskite nanowires (NWs) exhibit improved thermal and hydrolysis stability and could thus play a vital role in nanoscale optoelectronics. Among them, blue-light-based devices are extremely limited because of the lack of a facile method to obtain high-purity CsPbCl3 NWs. Herein, we report a direct and facile method for the synthesis of CsPbCl3 NWs assisted by inorganic ions that served both as a morphology controlling agent for the anisotropic growth of nanomaterials and a surface passivation species modulating the surface of nanomaterials. This new approach allows us to obtain high-purity and size-uniform NWs as long as 500 nm in length and 20 nm in diameter with high reproducibility. X-ray photoelectron spectroscopy and ultrafast spectroscopic measurements confirmed that a reduced band gap caused by the surface species of NWs relative to nanocubes (NCs) was achieved at the photon energy of 160 eV because of the hybrid surface passivation contributed by adsorbed inorganic ions. The resulting NWs demonstrate significantly enhanced photoelectrochemical performances, 3.5-fold increase in the photocurrent generation, and notably improved stability compared to their NC counterparts. Our results suggest that the newly designed NWs could be a promising material for the development of nanoscale optoelectronic devices.