M. C. Rogge

Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.

Spin blockade in capacitively coupled quantum dots

We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate that we can switch on and off tunnel coupling between both dots in addition to capacitive coupling. In the regime of pure capacitive coupling, we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.

Multiple transitions of the spin configuration in quantum dots.

Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect we are able to detect five regions with different spin configurations. Transitions are induced with changing electron numbers.

Coupling symmetry of quantum dot states

With noninvasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states.

Noninvasive detection of charge rearrangement in a quantum dot in high magnetic fields

We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as noninvasive detector. Our device, which is fabricated by local anodic oxidation, allows us to control independently the quantum point contact and all tunneling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot.

Probing a Kondo-correlated quantum dot with spin spectroscopy.

We investigate the Kondo effect and spin blockade observed in a many-electron quantum dot and study the magnetic field dependence. At lower fields, a pronounced Kondo effect is found, which is replaced by the spin blockade at higher fields. In an intermediate regime, both effects are visible. We make use of this combined effect to gain information about the internal spin configuration of our quantum dot. We find that the data cannot be explained assuming regular filling of electronic orbitals. Instead, spin polarized filling seems to be probable.

Two-path transport measurements with bias dependence on a triple quantum dot

We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. [1] The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.

Probing spin configurations in quantum dots

We study the magnetoconductance of lateral quantum dots in high magnetic fields. We use spin blockade and Kondo effect to investigate the spin configuration and the spin filling mechanism and find a dependence on the electron number of the quantum dot.

Noninvasive detection of charge rearrangement in a quantum dot

We demonstrate new results on electron redistribution on a single quantum dot caused by magnetic field. A quantum point contact is used to detect changes in the quantum dot charge. We are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. These features are used to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade.