M. Camprini

Ultralow DC power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless applications

The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as high electron-mobility transistors (HEMTs) or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the negative differential resistance and the extremely low dc power consumption. In this paper, we present a family of InP-HEMT-TD-based voltage-controlled oscillators operating in the 4-6-GHz band suitable for wireless applications, along with an effective analytical treatment of the stability issues. Prototypes having different circuit topologies of HEMT-TD devices have been designed and fabricated. The circuits generated an output power in the range of -11 to -18 dBm when operated at a bias current of 1.75 mA at 500 mV. Phase noise characteristics and tuning capability of the circuit configuration have been experimentally determined. The maximum tuning range of 150 MHz and the maximum single sideband-to-carrier ratio of -97 dBc/Hz at 200 kHz have been achieved.

MMIC applications of heterostructure interband tunnel devices

This paper deals with recent achievements in the field of an emerging technology termed the quantum monolithic microwave integrated circuit (QMMIC). QMMIC consists of a heterojunction interband tunneling diode and a high electron-mobility transistor monolithically integrated to obtain a new functional device. This technology enables the realization of low-voltage, high-density, and high-functionality circuits. A detailed description of the design and analysis techniques for several circuits such as an amplifier, an oscillator, and a mixer, along with the analytical treatment of the principle of operation are given in this paper. A number of prototypes implemented in InP technology constitute the proof-of-concept of the unique features of QMMIC circuit blocks for low-power wireless systems.

Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6 GHz band suitable for wireless applications. The circuit draws a current of 1.75 mA at 500 mV and generates an output power of -16 dBm. The maximum tuning range is 150 MHz and the single sideband-to-carrier ratio (SSCR) is of -105 dBc/Hz at 5 MHz.

A Linearized Mixer Model for Reducing the Complexity of System-Level Analysis

This paper introduces an approach to the behavioral modeling of the frequency dependent conversion mechanism in a RF/microwave mixers operating in its linear region. The core of the model consists of the conversion matrix of the nonlinear circuit under investigation, which represents its linearization around the large-signal state. This approach allows for a straightforward implementation in computer aided design (CAD) using the conversion matrix that is constructed from either simulation or measurements: the former is considered in this paper. We illustrate the technique by implementing this model in commercial CAD software, for the investigation of a micromixer cell suitable for UWB applications. Analysis and discussion about the computational effort reduction are reported

Ultra low DC power consumption In-P HITFET based differential oscillator

The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.

A study on a highly linear front-end for low/zero-IF receivers in the 5.8 GHz ISM band

In the recent few years, architectures alternative to the classical super-heterodyne receivers, like zero-IF or low-IF, have been investigated. In this paper, a possible solution to enable a high IIP2 front end and suitable for such receivers is described. The designed circuit, implemented in ADS using the OMMIC foundry GaAs-ED02AH process and operating in the 5.8 GHz ISM band, shows an IIP2 better than 50 dBm verifying the improvement of the described front end in comparison a classical approach. Moreover, a direct conversion receiver, including the mentioned solution, has been studied in order to appreciate the main receiver parameters like BER and sensitivity.