M. Carre

20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

The authors have fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum wells. The drive voltage for 12-dB extinction ratio is 1.2 V, and the frequency response is flat within 2 dB from DC to 20 GHz. Operation at 20 Gb/s is reported. Extensive data concerning the parasitic phase modulation (chirping) are obtained as a function of applied bias acid operating wavelength.<<ETX>>

Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-/spl mu/m multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio for a 4-V voltage swing) are reported using this technique that preserves the material optical and electrical quality.<<ETX>>

Polarization splitter based on modal birefringence in InP/InGaAsP optical waveguides

Polarization splitting in a directional coupler is realized for the first time in InP by using modal birefringence of the waveguide. The measured crosstalks at 1.52 mu m are, respectively, -16 dB and -17 dB for TE and TM modes. The device propagation loss is <1.5 dB.<<ETX>>

Spectral response apodization of Bragg-like optical filters with a novel grating chirp design

A novel grating chirp design providing symmetric apodization without perturbing local propagation constants is successfully applied to realize codirectional grating assisted filter. This technique is suited for apodization of Bragg grating filters and mirror spectra as well.

Polarization-independent electroabsorption modulator integrated with spot-size converters

Summary form only given. In summary we reported on an electroabsorption modulator integrated with spot-size converters. The design preserves polarization independence and modulation efficiency while relaxing alignment tolerances.

Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide

Monolithic integration of a quarter‐circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45‐μm‐long straight part and a quarter circle with a curvature radius of 150 μm. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415‐μm‐long tangential straight waveguide for an injection current of 140 mA.

InGaAsP/InGaAsP Multiple Quantum Well modulator with improved saturation intensity and bandwidth over 20 GHz

A single-mode modulator was realized from an AP-MOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54 mu m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power.<<ETX>>

p‐i‐n‐i‐p photodetector proposal and integration with waveguides

We propose a photodiode configuration suited for waveguide integration, and top and side illumination. This configuration based on a pair of p‐i‐n photodiodes, laid out alongside of one another, requires only one metallization type, and therefore, reduces the number of technological steps. A waveguide–photodiode integration illustrates this photodetector concept. The single heterostructure waveguide integrated evanescently with this p‐i‐n‐i‐p photodetector exhibits a 19 GHz bandwidth, as a result of the very low (30 fF) capacitance of a 20 μm long detector. Related to its symmetrical features, this p‐i‐n‐i‐p photodetector is a means to improve fabrication yield of integrated optoelectronic devices.

Proposal and demonstration of a symmetrical npipn electroabsorption modulator

We propose a new type of electroabsorption modulator based on a npipn diode structure. Its transmission curve versus applied bias should be symmetrical with respect to zero bias. A npipn InGaAs-InAlAs multiple-quantum-well (MQW) modulator has been fabricated to experimentally demonstrate two applications for optical fiber transmission systems: pulse generation with adjustable duty cycle for optical time division multiplexing and harmonic generation up to 40 GHz for millimeter radiowave transport on optical fiber.<<ETX>>