M. D'Iorio

Possible metal-insulator transition at B=0 in two dimensions.

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value,

Termination of the quantized Hall effect by the electron solid

n_{cr}\sim 10^{11}

Characterization of the surface acoustic wave induced potential in a GaAsAlGaAs heterostructure

cm

Temperature dependence of the quantum Hall resistance

^{-2}

Transport properties of a 2D electron solid in Si-MOSFETs

), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For

Narrow channel breakdown in GaAs/AlGaAs Heterostructures

n_s<N_{cr}

Collective insulating state at zero magnetic field in a dilute 2D electron system

, the sample is insulating. The resistivity is empirically found to SCALE WITH TEMPERATURE BOTH BELOW AND ABOVE

Hole Tunneling in Si1-xGex/Si Heterostructures Grown by Molecular Beam Epitaxy

n_{cr}

Re-entrant metal-insulator transitions in SiSiGeSi heterostructures

WITH A SINGLE PARAMETER which approaches zero at

Scaling of a metal/insulator transition in a 2D system at B = 0

n_s=n_{cr}