M. D. Teodoro

Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields

We report a comprehensive discussion of quantum interference effects due to the finite structure of neutral excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. The signatures of built-in electric fields and temperature on quantum interference are demonstrated by theoretical models that describe the modulation of the interference pattern and confirmed by complementary experimental procedures.

Magneto-optical properties of Cd1−xMnxS nanoparticles: influences of magnetic doping, Mn2+ ions localization, and quantum confinement

Cd(1-x)Mn(x)S nanoparticles (NPs) were successfully grown in a glass matrix and investigated by optical absorption (OA), magnetic circularly polarized photoluminescence (MCPL) measurements, and magnetic force microscopy (MFM). The room temperature OA spectra have revealed the formation of two groups of Cd(1-x)Mn(x)S NPs with different sizes: bulk-like nanocrystals (NCs) and quantum dots (QDs). The MCPL spectra were recorded at 2.0 K with several magnetic fields up to 15 T, allowing a detailed comparison between the degrees of circular polarization of the two groups of NPs. The different behaviours of magneto-optical properties of bulk-like NCs and QDs were explained by taking into account a considerable alteration of exchange interaction between the carrier spins and the substitutional doping magnetic ions incorporated into the NPs. As a main result, we have demonstrated that self-purification is the dominant mechanism that controls the doping in semiconductor QDs grown by the melting-nucleation synthesis approach due to the relatively high temperature that was used in thermal annealing of samples.

Carrier transfer in vertically stacked quantum ring-quantum dot chains

The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures

Strong optical anisotropy is observed in the emission from a GaAs1−xBix (x ∼ 0.04) quantum well grown by low temperature molecular beam epitaxy on (001) GaAs by means of low temperature magneto-photoluminescence (MPL) taken at 2 K in Faraday geometry for magnetic fields, B, up to 10 T. A significant diamagnetic shift (∼2.5 meV) develops for magnetic fields above ∼8 T, which is accompanied by a narrowing of the emission bandwidth and a substantial increase in the difference between the integrated intensities of the σ+ and σ− polarizations in the MPL spectra. This, along with a peculiar spectral dependence of the polarization degree which evolves with increasing magnetic field, is interpreted in terms of bound and free magneto excitons in the system where Bi-related levels become hybridized to different extents with the valence and conduction bands of the GaAs host material.

In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure

This work reports the investigation on the structural differences between InAs quantum rings and their precursor quantum dots species as well as on the presence of piezoelectric fields and asymmetries in these nanostructures. The experimental results show significant reduction in the ring dimensions when the sizes of capped and uncapped ring and dot samples are compared. The iso-lattice parameter mapped by grazing-incidence x-ray diffraction has revealed the lateral extent of strained regions in the buried rings. A comparison between strain and composition of dot and ring structures allows inferring on how the ring formation and its final configuration may affect optical response parameters. Based on the experimental observations, a discussion has been introduced on the effective potential profile to emulate theoretically the ring-shape confinement. The effects of confinement and strain field modulation on electron and hole band structures are simulated by a multiband k.p calculation.

Aharonov-Bohm Effect for Neutral Excitons in Quantum Rings

Quantum interference patterns predicted by theory due to the finite structure of neutral excitons in InAs quantum rings are corroborated experimentally in the magneto-photoluminescence spectra of these nanostructures. The effects associated to built in electric fields and to the temperature on these Aharonov-Bohm-like oscillations are described and confirmed by complementary experimental procedures.

Direct preparation of standard functional interfaces in oxide heterostructures for 2DEG analysis through beam-induced platinum contacts

Two-dimensional electron gas (2DEG) in SrTiO3/LaAlO3 heterostructures has been extensively studied in the last few years; however, little attention has been given to a practical way to contact electrically the low dimensional gas at the interface. This work demonstrates a method to contact the 2DEG formed at the oxide interfaces connected by platinum electrodes which were made by the decomposition of organometallic gas using focused ion beams. On the surface, the electrodes were defined through photolithography, and at the interface, the electrodes were deposited through the focused ion beams and electrons, which were then evaluated. The quality of the interface electrodes was evaluated at two different partial oxygen pressures (pO2) used for the film deposition: low (10−4 mbar) and high (10−1 mbar). The electrode deposition conditions using electrons or ions have resulted in different rates of metal deposition and interaction with the interface leading to either metallic (2DEG) or insulating behavior.Two-dimensional electron gas (2DEG) in SrTiO3/LaAlO3 heterostructures has been extensively studied in the last few years; however, little attention has been given to a practical way to contact electrically the low dimensional gas at the interface. This work demonstrates a method to contact the 2DEG formed at the oxide interfaces connected by platinum electrodes which were made by the decomposition of organometallic gas using focused ion beams. On the surface, the electrodes were defined through photolithography, and at the interface, the electrodes were deposited through the focused ion beams and electrons, which were then evaluated. The quality of the interface electrodes was evaluated at two different partial oxygen pressures (pO2) used for the film deposition: low (10−4 mbar) and high (10−1 mbar). The electrode deposition conditions using electrons or ions have resulted in different rates of metal deposition and interaction with the interface leading to either metallic (2DEG) or insulating behavior.

Investigation of trapping levels in p-type Zn3P2 nanowires using transport and optical properties

Here, we report the synthesis and structural characterization of high-quality Zn3P2 nanowires via chemical vapour deposition. Structural and morphological characterization studies revealed a reliable growth process of long, uniform, and single-crystalline nanowires. From temperature dependent transport and photoluminescence measurements, we have observed the contribution of different acceptor levels (15, 50, 70, 90, and 197 meV) to the conduction mechanisms. These levels were associated with zinc vacancies and phosphorous interstitial atoms which assigned a p-type character to this semiconductor. From time resolved photoluminescence experiments, a 91 ps lifetime decay was found. Such a fast lifetime decay is in agreement with the exciton transition along the bulk emission from high quality crystalline nanowires.Here, we report the synthesis and structural characterization of high-quality Zn3P2 nanowires via chemical vapour deposition. Structural and morphological characterization studies revealed a reliable growth process of long, uniform, and single-crystalline nanowires. From temperature dependent transport and photoluminescence measurements, we have observed the contribution of different acceptor levels (15, 50, 70, 90, and 197 meV) to the conduction mechanisms. These levels were associated with zinc vacancies and phosphorous interstitial atoms which assigned a p-type character to this semiconductor. From time resolved photoluminescence experiments, a 91 ps lifetime decay was found. Such a fast lifetime decay is in agreement with the exciton transition along the bulk emission from high quality crystalline nanowires.

Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells

The electron transport and recombination processes of photoexcited electron-hole pairs were studied in InGaAs/InP single quantum wells. Comprehensive transport data analysis reveals a asymmetric shape of the quantum well potential where the electron mobility was found to be dominated by interface-roughness scattering. The low-temperature time-resolved photoluminescence was employed to investigate recombination kinetics of photogenerated electrons. Remarkable modification of Auger recombination was observed with variation of the electron mobility. In high mobility quantum wells, the increasing pump power resulted in a new and unexpected phenomenon: a considerably enhanced Auger non-radiative recombination time. We propose that the distribution of the photoexcited electrons over different conduction band valleys might account for this effect. In low mobility quantum wells, disorder-induced relaxation of the momentum conservation rule causes inter-valley transitions to be insignificant; as a consequence, the...

Circular polarization in a non-magnetic resonant tunneling device

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.