M. Della Noce

Nanostructured porous silicon for gas sensor applications

Abstract The response of two different types of nanostructured gas sensor to oxygen has been investigated. The first (optical) is based on the photoluminescence quenching effect of a porous silicon sample, the second on the changes of the electrical conductance v. environment of a porous silicon free standing membrane on an insulating neutral substrate. The response of both the devices to oxygen have been measured and compared. The optical based gas sensor exhibits a quenching following the Stern-Volmer model. The corresponding reactivity rate constant is found to depend on a characteristic nanodimension of the wire. The electrically operated sensor is more sensitive to oxygen and shows an opposite behavior if exposed to a reducing environment.