M. Di Ventra

Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.

Practical Approach to Programmable Analog Circuits With Memristors

We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and high voltages are used to program the memristors states. This way, as it was demonstrated in recent experiments, the state of memristors does not essentially change during analog mode operation. As an example of our approach, we have built several programmable analog circuits demonstrating memristor-based programming of threshold, gain and frequency. In these circuits the role of memristor is played by a memristor emulator developed by us.

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface.

Phase-transition driven memristive system

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.

Spin memristive systems : Spin memory effects in semiconductor spintronics

Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behavior. Our scheme is fundamentally different from previously discussed schemes of memristive systems and broadens the possible range of applications of semiconductor spintronics.

The benzene molecule as a molecular resonant-tunneling transistor

Experiments and theory have so far demonstrated that single molecules can form the core of a two-terminal device. Here we report first-principles calculations of transport through a benzene-1, 4-dithiolate molecule with a third capacitive terminal (gate). We find that the resistance of the molecule rises from its zero-gate-bias value to a value roughly equal to the quantum of resistance (12.9 kΩ) when resonant tunneling through the π* antibonding orbitals occurs.

Neuromorphic, Digital, and Quantum Computation With Memory Circuit Elements

Memory effects are ubiquitous in nature and the class of memory circuit elements - which includes memristive, memcapacitive, and meminductive systems - shows great potential to understand and simulate the associated physical processes. Here, we show that such elements can also be used in electronic schemes mimicking biologically inspired computer architectures, performing digital logic and arithmetic operations, and can expand the capabilities of certain quantum computation schemes. In particular, we will discuss some examples where the concept of memory elements is relevant to the realization of associative memory in neuronal circuits, spike-timing-dependent plasticity (STDP) of synapses, and digital and field-programmable quantum computing.

Memristive adaptive filters

Using the memristive properties of vanadium dioxide, we experimentally demonstrate an adaptive filter by placing a memristor into an LC contour. This circuit reacts to the application of select frequency signals by sharpening the quality factor of its resonant response, and thus “learns” according to the input waveform. The proposed circuit employs only analog passive elements, and may find applications in biologically inspired processing and information storage. We also extend the learning-circuit framework mathematically to include memory-reactive elements, such as memcapacitors and meminductors, and show how this expands the functionality of adaptive memory filters.

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Results of room temperature capacitance–voltage measurements are reported for SiO2/4H–SiC (n and p type) metal-oxide-semiconductor capacitors annealed in ammonia following oxide layer growth using standard wet oxidation techniques. For n-SiC capacitors, both the interface state density near the conduction band edge and the effective oxide charge are substantially reduced by the ammonia anneals. For 2 h anneals, the oxide charge appears to have a minimum value for an anneal temperature of approximately 1100 °C. However, for p-SiC, anneals in ammonia produce no improvement in the interface state density near the valence band edge, and the effective oxide charge is not reduced compared to samples that were not annealed. Results are compared to those reported previously for anneals in nitric oxide. Ion beam analyses of the oxide layers show substantially more nitrogen incorporation with the ammonia anneals, although for n-SiC, the decrease in Dit is comparable for both nitric oxide and ammonia anneals. Result...

Memristive circuits simulate memcapacitors and meminductors

Electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory) are proposed. Using a memristor emulator, the suggested circuits have been built and their operation has been demonstrated, showing a useful and interesting connection between the three memory elements.