M. Dobrowolska

Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy

We report the formation of self‐assembling CdSe quantum dots during molecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microscopy measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 40±5 nm, and with a diameter‐to‐height ratio consistently very close to 4:1. Uncapped CdSe dots are unstable with time: their density was observed to drop by an order of magnitude in 10 days, with clear evidence of ripening observed for some dots. Photoluminescence from capped dots indicates exciton localization much stronger than in ZnCdSe/ZnSe quantum wells, due to the additional lateral confinement.

Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

We use micro- and nano-photoluminescence to study the temperature-dependent excitonic emission from CdSe quantum dots embedded in a ZnSe matrix. By varying the spatial resolution from 200 nm to 1.7 μm, we are able to study the temperature dependence of the ultranarrow (∼200 μeV) emission from excitons confined to single quantum dots, as well as statistical ensembles of up to 200 dots. By measuring the quenching of the photoluminescence (PL) with temperature, we find compelling evidence that the PL emission from these samples results from two different kinds of states. Similar to previous work, we find that a broad PL line persists to 300 K with an activation energy of ∼40 meV. However, we find that the ultranarrow lines are quenched at about 60 K, indicating an effective activation energy of only 4.0 meV.

CdSe quantum dots in a Zn1−xMnxSe matrix: new effects due to the presence of Mn

Abstract We report detailed photoluminescence (PL) and magneto-PL data on a new II–VI quantum dot (QD) system involving diluted magnetic semiconductors (DMSs). CdSe dots embedded in ZnMnSe exhibit relatively weak PL emission compared to analogous non-DMS systems, such as CdSe/ZnSe. However, we observe a dramatic increase in the PL intensity emitted by excitons confined in such QDs when a magnetic field is applied. We explain this effect in terms of an efficient transfer of excitation between the excitons and the Mn ions. In addition to this, we report on the role that Mn plays in CdSe dot nucleation, providing a new handle for optimization of the growth of the CdSe QDs.

Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films

We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1−xMnxAs. For this investigation we have purposely chosen Ga1−xMnxAs with a low Mn concentration (x≈0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1−xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magnetotransport (i.e., Hall effect and planar Hall-effect measurements). These measurements enable us to observe coherent spin rotation and noncoherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multistep spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magnetotransport data. An interesting characteristic of perpendicular magnetization reversal in Ga1−xMnxAs with low x is the appearance of double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion.We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1−xMnxAs. For this investigation we have purposely chosen Ga1−xMnxAs with a low Mn concentration (x≈0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1−xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magnetotransport (i.e., Hall effect and planar Hall-effect measurements). These measurements enable us to observe coherent spin rotation and noncoherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multistep spin switching. The agre...

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Enhancement of Curie temperature in Ga1−xMnxAs/Ga1−yAlyAs ferromagnetic heterostructures by Be modulation doping

The effect of modulation doping by Be on the ferromagnetic properties of Ga1−xMnxAs is investigated in Ga1−xMnxAs/Ga1−yAlyAs heterojunctions and quantum wells. Introducing Be acceptors into the Ga1−yAlyAs barriers leads to an increase of the Curie temperature TC of Ga1−xMnxAs, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multiband mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of TC occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.

In1−xMnxSb—a narrow-gap ferromagnetic semiconductor

A narrow-gap ferromagnetic In1−xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1−xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures TC ranging up to 8.5 K. The observed values of TC agree well with the existing models of carrier-induced ferromagnetism.

Structural properties of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Thin films of Bi2Te3 and Bi2Se3 have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Optical spectroscopy on individual CdSe/ZnMnSe quantum dots

Optical single dot studies in wide-band gap diluted magnetic CdSe/ZnMnSe quantum dots have been performed. Due to the sample design, the photoluminescence energy of the quantum dot signal is energetically below the internal Mn2+ transition, resulting in high quantum efficiencies comparable to nonmagnetic CdSe/ZnSe quantum dots. Magnetic-field- and temperature-dependent measurements on individual dots clearly demonstrate the exchange interaction between single excitons and individual Mn2+ ions, resulting in a giant Zeeman effect and a formation of quasi-zero-dimensional magnetic polarons.

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor.

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.