M.E.H. Maia da Costa

Growth and surface characterization of TiNbZr thin films deposited by magnetron sputtering for biomedical applications.

Low modulus of elasticity and the presence of non-toxic elements are important criteria for the development of materials for implant applications. Low modulus Ti alloys can be developed by designing β-Ti alloys containing non-toxic alloying elements such as Nb and Zr. Actually, most of the metallic implants are produced with stainless steel (SS) because it has adequate bulk properties to be used as biomaterials for orthopedic or dental implants and is less expensive than Ti and its alloys, but it is less biocompatible than them. The coating of this SS implants with Ti alloy thin films may be one alternative to improve the biomaterial properties at a relatively low cost. Sputtering is a physical deposition technique that allows the formation of nanostructured thin films. Nanostructured surfaces are interesting when it comes to the bone/implant interface due to the fact that both the surface and the bone have nanoscale particle sizes and similar mechanical properties. TiNbZr thin films were deposited on both Si(111) and stainless steel (SS) substrates. The TiNbZr/Si(111) film was used as a model system, while the TiNbZr/SS film might improve the biocompatibility and extend the life time of stainless steel implants. The morphology, chemical composition, Youngs modulus, and hardness of the films were analyzed by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and nanoindentation.

Physicochemical structure of SiCx:H to improve DLC adhesion on steel

Diamond-like carbon (DLC) coatings show strident properties such as high wear resistance and ultra-low friction. However, a widespread use regarding energy efficiency issues is neglected due to the poor adhesion. Silicon adhesion interlayers (SiCx:H) were deposited at different temperatures from 50 to 500°C with hexamethyldisiloxane followed by DLC. The microstructure was analysed by atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The chemical depth profiling and chemical mapping were performed by glow discharge optical emission spectroscopy and energy-dispersive spectroscopy, respectively. Hardness and critical loads were analysed by nanoindentation tests. At higher deposition temperatures the Si-containing interlayers show lower relative content of H, O and Si and higher relative content of C, allowing the formation of more C–C chemical bonds at the outermost DLC/SiCx:H interface, which is correlated to better adhesion. Finally, an atomistic model is proposed in order to explain the DLC debonding and bonding mechanisms.

Multiwalled carbon nanotubes decorated with cobalt oxide nanoparticles

Multiwalled carbon nanotubes (MWCNTs) synthesized by spray pyrolysis were decorated with cobalt oxide nanoparticles using a simple synthesis route. This wet chemistry method yielded nanoparticles randomly anchored to the surface of the nanotubes by decomposition of cobalt nitrate hexahydrate diluted in acetone. Electron microscopy analysis indicated that dispersed particles were formed on the MWCNTs walls. The average size increased with the increasing concentration of cobalt nitrate in acetone in the precursor mixture. TEM images indicated that nanoparticles were strongly attached to the tube walls. The Raman spectroscopy results suggested that the MWCNT structure was slightly damaged after the nanoparticle growth.

TiO2 anatase nanorods with non-equilibrium crystallographic {001} facets and their coatings exhibiting high photo-oxidation of NO gas

ABSTRACT Development of highly active photocatalysts is mandatory for more widespread application of this alternative environmental technology. Synthesis of photocatalysts, such as anatase TiO2, with more reactive, non-equilibrium, crystallographic facets is theoretically justified by a more efficient interfacial charge transfer to reactive adsorbed species, increasing quantum efficiency of photocatalyst. Air and vacuum calcinations of protonated trititanate nanotubes lead to their transformation to anatase nanorods. The nanorods synthesized by air calcination demonstrate photo-oxidation of NO gas more than three times superior to the one presented by the benchmark P-25 photocatalyst. This performance has been explained in terms of 50% higher specific surface area and, more importantly, through the predominance of more reactive, non-equilibrium, {001} crystallographic facets of the anatase nanorods. These facets present a high density of undercoordinated Ti cations, which favors adsorption of reactant species, and strained Ti–O–Ti bonds, leading to more efficient photo-oxidation reactions. Reduced Ti species, such as Ti3+, were not observed in the as-obtained nanorods, while reactive adsorbed molecules are scarce on the nanorods obtained through vacuum calcination. Dip-coating of TiO2 anatase nanorods (air calcined) over soda-lime glass plates was used to prepare visible light transparent, superhydrophilic and highly adherent photocatalytic coatings with homogenously distributed nanopores.

Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.