M. Fatih Kilicaslan

Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM.

In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

Depth sensing indentation analyses of hypereutectic Al-10Ni — XSc (X = 0, 1, 2) alloys

Depth sensing indentation analyses of hypereutectic Al-10Ni alloys with different amounts of Sc content were performed to determine the values of elastic modulus, dynamic microhardness, creep rate and elastic recovery rate. Microstructural characterizations were performed by using scanning electron microscopy (SEM), SEM mapping and an X-ray diffractometer. The results revealed that the addition of Sc refined the intermetallic phases of Al and Ni, and led to the formation of two additional intermetallic phases as well, namely Al3Sc and metastable Al9Ni2. The Al-Ni alloys investigated in this work exhibited elastoplastic behavior at room temperature and the addition of Sc influences their elastic-plastic responses to the indentation process. In addition, dynamic microhardness of them exhibited a load-dependent character called the indentation size effect. The addition of Sc considerably improved the values of dynamic microharddness, elastic modulus and elastic recovery rate. It also resulted in a lower creep displacement rate.