M.G. Barseghyan

Electronic and intraband optical properties of single quantum rings under intense laser field radiation

The influence of an intense laser field on one-electron states and intraband optical absorption coefficients is investigated in two-dimensional GaAs/Ga0.7Al0.3As quantum rings. An analytical expression of the effective lateral confining potential induced by the laser field is obtained. The one-electron energy spectrum and wave functions are found using the effective mass approximation and exact diagonalization technique. We have shown that changes in the incident light polarization lead to blue- or redshifts in the intraband optical absorption spectrum. Moreover, we found that only blueshift is obtained with increasing outer radius of the quantum ring.

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7 Al0.3As quantum ring

The simultaneous influences of an intense laser field and static electric field on one-electron states and intraband optical absorption coefficient are investigated in two-dimensional GaAs/GaAl0.3 As quantum ring. An analytical expression of the effective confining potential in the presence of the external fields is obtained. The one-electron energy levels and wave functions are calculated using the effective mass approximation and an exact diagonalization technique. We show that changes in the incident light polarization lead to blue- or redshifts in the intraband optical absorption spectrum. Moreover, we found that blueshift and redshift are induced by the simultaneous influences of an intense laser and lateral electric fields. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum rings and to control their specific properties by means of intense laser and homogeneous electric fields.

Donor impurity-related linear and nonlinear intraband optical absorption coefficients in quantum ring: effects of applied electric field and hydrostatic pressure

AbstractThe linear and nonlinear intraband optical absorption coefficients in GaAs three-dimensional single quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and electric field, applied along the growth direction of the heterostructure, the energies of the ground and first excited states of a donor impurity have been found using the effective mass approximation and a variational method. The energies of these states are examined as functions of the dimensions of the structure, electric field, and hydrostatic pressure. We have also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as a function of incident photon energy for several configurations of the system. It is found that the variation of distinct sizes of the structure leads to either a redshift and/or a blueshift of the resonant peaks of the intraband optical spectrum. In addition, we have found that the application of an electric field leads to a redshift, whereas the influence of hydrostatic pressure leads to a blueshift (in the case of on-ring-center donor impurity position) of the resonant peaks of the intraband optical spectrum.

Molecular spectrum of laterally coupled quantum rings under intense terahertz radiation

We study the influence of intense THz laser radiation and electric field on molecular states of laterally coupled quantum rings. Laser radiation shows the capability to dissociate quantum ring molecule and add 2-fold degeneracy to the molecular states at the fixed value of the overlapping size between rings. It is shown that coupled to decoupled molecular states phase transition points form almost a straight line with a slope equal to two. In addition, the electric field direction dependent energy spectrum shows unexpected oscillations, demonstrating strong coupling between molecular states. Besides, intraband absorption is considered, showing both blue and redshifts in its spectrum. The obtained results can be useful for the controlling of degeneracy of the discrete energy spectrum of nanoscale structures and in the tunneling effects therein.

Interaction-driven distinctive electronic states of artificial atoms at the ZnO interface

We have investigated the electronic states of planar quantum dots at the ZnO interface containing a few interacting electrons in an externally applied magnetic field. The electron-electron interaction effects are expected to be much stronger in this case than in traditional semiconductor quantum systems, such as in GaAs or InAs quantum dots. In order to highlight that stronger Coulomb effects in the ZnO quantum dots, we have compared the energy spectra and the magnetization in this system to those of the InAs quantum dots. We have found that in the ZnO quantum dots the signatures of stronger Coulomb interaction manifests in an unique ground state that has very different properties than the corresponding ones in the InAs dot. Our results for the magnetization also exhibits behaviors never before observed in a quantum dot for a realistic set of parameters. We have found a stronger temperature dependence and other unexpected features, such as paramagnetic-like behavior at high temperatures for a quantum-dot helium.

Irregular Aharonov–Bohm effect for interacting electrons in a ZnO quantum ring

The electronic states and optical transitions of a ZnO quantum ring containing few interacting electrons in an applied magnetic field are found to be very different from those in a conventional semiconductor system, such as a GaAs ring. The strong Zeeman interaction and the Coulomb interaction of the ZnO system, two important characteristics of the electron system in ZnO, exert a profound influence on the electron states and on the optical properties of the ring. In particular, our results indicate that the Aharonov-Bohm (AB) effect in a ZnO quantum ring strongly depends on the electron number. In fact, for two electrons in the ZnO ring, the AB oscillations become aperiodic, while for three electrons (interacting) the AB oscillations completely disappear. Therefore, unlike in conventional quantum ring topology, here the AB effect (and the resulting persistent current) can be controlled by varying the electron number.

Intersubband absorption in quantum wire with a convex bottom in a magnetic field

The electron states in a cylindrical quantum well with a convex bottom in a magnetic field directed along the wire axis are investigated. The electron wavefunctions, depending on the quantum well characteristics and the magnetic field induction, are found. The absorption coefficient of a monochromatic linearly polarized light wave caused by intersubband transitions of electrons in the quantum wire is calculated. The selection rules are considered and analytical expressions for the absorption coefficient are presented for two cases of light wave polarization.

Modeling of anisotropic properties of double quantum rings by the terahertz laser field

The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.

Effects of hydrostatic pressure and temperature on interband optical transitions in InAs/GaAs vertically coupled double quantum dots

We consider the effect of hydrostatic pressure, temperature and the variations of structures sizes on interband transition energy and absorption coefficient in InAs/GaAs vertically coupled double quantum dots. The threshold energy of interband optical transitions is examined as a function of hydrostatic pressure and temperature for the different geometries of the structure. We also investigated the dependencies of the interband light absorption coefficient on the incident photon energy.

Effects of hydrostatic pressure, temperature, electric field and aluminum concentration on the electronic states in GaAs/Ga1−xAlxAs concentric double quantum rings

Using the effective mass approximation and transfer matrix formalism the ground state energy of an electron in GaAs/Ga1−xAlxAs concentric double quantum rings is calculated taking into account the combined effects of electric field, hydrostatic pressure, temperature and aluminum concentration. The ground state energy dependences on the mentioned factors are presented for different values of the sizes of rings and electric field strength. It is found that the considered effects mainly depend on the dimensions of quantum rings.