M. G. Kibria

Visible light-driven efficient overall water splitting using p -type metal-nitride nanowire arrays

Solar water splitting for hydrogen generation can be a potential source of renewable energy for the future. Here we show that efficient and stable stoichiometric dissociation of water into hydrogen and oxygen can be achieved under visible light by eradicating the potential barrier on nonpolar surfaces of indium gallium nitride nanowires through controlled p-type dopant incorporation. An apparent quantum efficiency of ∼12.3% is achieved for overall neutral (pH∼7.0) water splitting under visible light illumination (400-475 nm). Moreover, using a double-band p-type gallium nitride/indium gallium nitride nanowire heterostructure, we show a solar-to-hydrogen conversion efficiency of ∼1.8% under concentrated sunlight. The dominant effect of near-surface band structure in transforming the photocatalytic performance is elucidated. The stability and efficiency of this recyclable, wafer-level nanoscale metal-nitride photocatalyst in neutral water demonstrates their potential use for large-scale solar-fuel conversion.

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-neutral, storable and sustainable source of energy. Here we show that one of the major obstacles for achieving efficient and stable overall water splitting over the emerging nanostructured photocatalyst is directly related to the uncontrolled surface charge properties. By tuning the Fermi level on the nonpolar surfaces of gallium nitride nanowire arrays, we demonstrate that the quantum efficiency can be enhanced by more than two orders of magnitude. The internal quantum efficiency and activity on p-type gallium nitride nanowires can reach ~51% and ~4.0 mol hydrogen h(-1) g(-1), respectively. The nanowires remain virtually unchanged after over 50,000 μmol gas (hydrogen and oxygen) is produced, which is more than 10,000 times the amount of photocatalyst itself (~4.6 μmol). The essential role of Fermi-level tuning in balancing redox reactions and in enhancing the efficiency and stability is also elucidated.

Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode

We report on the first demonstration of stable photoelectrochemical water splitting and hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide), which is achieved by InGaN/GaN core/shell nanowire arrays grown on Si substrate using catalyst-free molecular beam epitaxy. The nanowires are doped n-type using Si to reduce the surface depletion region and increase current conduction. Relatively high incident-photon-to-current-conversion efficiency (up to ~27%) is measured under ultraviolet and visible light irradiation. Under simulated sunlight illumination, steady evolution of molecular hydrogen is further demonstrated.

High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l(-1) solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ~15% and 18% are measured for undoped and Si-doped GaN nanowires under ~350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode.

Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes

High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of ∼59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.

A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination

A dual-photoelectrode device, consisting of a photoanode and photocathode with complementary energy bandgaps, has long been perceived as an ideal scheme for achieving high efficiency, unassisted solar-driven water splitting. Previously reported 2-photon tandem devices, however, generally exhibit an extremely low efficiency (<0.1%), which has been largely limited by the incompatibility between the two photoelectrode materials. Here we show that the use of metal-nitride nanowire photoelectrodes, together with the scheme of parallel illumination by splitting the solar spectrum spatially and spectrally, can break the efficiency bottleneck of conventional 2-photon tandem devices. We have first investigated a dual-photoelectrode device consisting of a GaN nanowire photoanode and an InGaN nanowire photocathode, which exhibited an open circuit potential of 1.3 V and nearly 20-fold enhancement in the power conversion efficiency under visible light illumination (400-600 nm), compared to the individual photoelectrodes in 1 mol/L HBr. We have further demonstrated a dual-photoelectrode device consisting of parallel-connected metal-nitride nanowire photoanodes and a Si/InGaN nanowire photocathode, which can perform unassisted, direct solar-to-hydrogen conversion. A power conversion efficiency of 2% was measured under AM1.5G 1 sun illumination.

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr2O3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts.

Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET

Quasi-static capacitance voltage (CV) characteristics of In1-xGaxSb-on-insulator field-effect transistor (FET) are investigated using 1-D coupled Schrödinger-Poisson equations. Here, we report for the first time the staircase trend in the CV characteristics of such ultrathin-body FET. This observation is well correlated with the gate-bias-dependent electron concentration in different subbands. It is revealed that the staircase trend tends to disappear as the channel thickness increases above 15 nm. While the channel thickness and doping concentration-dependent shifts in CV curves are found to be significant, the composition-dependent shift is almost negligible.

Dye-sensitized InGaN nanowire arrays for efficient hydrogen production under visible light irradiation

Solar water splitting is a key sustainable energy technology for clean, storable and renewable source of energy in the future. Here we report that Merocyanine-540 dye-sensitized and Rh nanoparticle-decorated molecular beam epitaxially grown In0.25Ga0.75N nanowire arrays have produced hydrogen from ethylenediaminetetraacetic acid (EDTA) and acetonitrile mixture solution under green, yellow and orange solar spectra (up to 610 nm) for the first time. An apparent quantum efficiency of 0.3% is demonstrated for wavelengths 525-600 nm, providing a viable approach to harness deep-visible and near-infrared solar energy for efficient and stable water splitting.

On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface States

Here, we report the effect of channel thickness on the performance of a InGaSb-on-insulator FET with 15-nm gate length. The ballistic current-voltage characteristic is computed by nonequilibrium Greens function method using thickness-dependent effective mass, which is extracted from tight binding dispersion. Simulation result reveals that the threshold voltage and subthreshold slope decrease with decreasing channel thickness. Nearly three times enhancement in the ON-state current is observed for 3 nm compared with a 5-nm channel when the OFF-state current is made equal in each case by tuning the gate metal work function (WF). The drain-induced barrier lowering is found to decrease with decreasing channel thickness. However, interface states and roughness greatly affect the performance of such ultrathin-body device. Nevertheless, impact of interface states can be compensated by engineering the gate metal WF.