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Dive into the research topics where M. Gamoudi is active.

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Featured researches published by M. Gamoudi.


Journal of Applied Physics | 1984

Characterization of metallophthalocyanine‐metal contacts: Electrical properties in a large frequency range

Bouzid Boudjema; G. Guillaud; M. Gamoudi; Monique Maitrot; J.C. André; Michel Martin; Jacques Simon

The dark electrical properties of metallophthalocyanine‐metal contacts are studied in an extended frequency range (10−3–105 Hz). The measurements show that the standard Schottky model cannot be applied to metallo‐organic semiconductors. Three different contributions to the admittance may be distinguished. Over the very first few angstroms of the semiconductor extends a surface‐charge layer associated with a high capacitive term. The surface‐charge capacitance is only slightly dependent upon superimposed dc voltages. The so‐called space‐charge region extends below the surface‐charge layer over approximately 2000–4000 A. The properties of this space‐charge region are, however, dramatically different from those found in monocrystalline inorganic semiconductors. The corresponding capacity is almost independent of any dc superimposed voltage. At the same time, the resistance of the space‐charge region is highly dependent on externally applied dc voltages. The I‐V relationship seems to indicate a Frenkel–Poole ...


Thin Solid Films | 1995

Transient behaviour of thin film transistors based on nickel phthalocyanine

G. Guillaud; R. Ben Chaabane; C. Jouve; M. Gamoudi

Abstract Measurements of transient currents have been made on evaporated thin film transistors based on nickel phthalocyanine. A time delay has been observed for the establishment of the drain current. The results are consistent with the theoretical model described by Burns. A study of this delay as a function of the drain bias voltage indicates that the mobility is field dependent and that the threshold voltage is close to zero.


Electrochimica Acta | 1998

Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors

R. Mlika; H. Ben Ouada; R. Ben Chaabane; M. Gamoudi; G. Guillaud; Nicole Jaffrezic-Renault; Roger Lamartine

Thin p-tert-butyl calix[4]arene and p-tert-butyl calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure. Electrochemical capacity measurements were made to test and calibrate physico-chemical sensors with regards to their sensitivity and selectivity. The sensing properties of calix[4]arene and calix[6]arene towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime (compared with membranes prepared by physical adsorption techniques) and sensitivity observed for these films indicates that these structures are worthy of further developments.


Sensors and Actuators B-chemical | 1998

Study of ion-selective evaporated calixarene film used as a sensitive layer on ISFET sensors

R. Mlika; H. Ben Ouada; Nicole Jaffrezic-Renault; I Dumazet; R Lamartine; M. Gamoudi; G. Guillaud

Abstract Thin calix[4]arene and calix[6]arene films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical ion-selective field effect transistor (ISFET) microsensors. A high-performance liquid-phase chromatography (HPLC) method was used to verify the non-degradation of the calixarene layers, after the evaporation process. The sensing properties of these ionophores towards alkaline and heavy metal ions were tested. Both devices have shown Nernstian response and a wide working pH range. The former responded well to sodium ions and the latter to nickel ions, thus partial selectivity for these ions is shown. The improved lifetime membranes and sensitivity observed for these films indicates that these structures are worthy of further developments.


Synthetic Metals | 1997

Electrical properties of molybdenum disulfide MoS2. Experimental study and density functional calculation results

O. El Beqqali; I. Zorkani; F. Rogemond; H. Chermette; R. Ben Chaabane; M. Gamoudi; G. Guillaud

Abstract Molybdenum disulfide is a very interesting material with numerous applications. However, to our knowledge, very few experimental works involving electrical measurements have been performed with this material up to now. This paper is devoted to the characterization of conduction mechanisms in thin layers and pressed pellets. The electronic structure related to the lubricating properties and the activation energy are determined using theoretical calculations (density functional theory) and experimental methods. A good agreement is found between the theoretical predictions and the experimental results. D.c. and a.c. conductivities are measured in the frequency range 10–107 Hz. The electronic transport mechanism is discussed in terms of Mott hopping in samples. The a.c. conductivity at high frequencies can be expressed by the formula σac(ω) = Aω11, where the slope n is close to 0.8.


Sensors and Actuators B-chemical | 1996

Study of the membrane morphology and investigation of sensitivity to ions for sensors based on calixarenes

R. Ben Chaabane; M. Gamoudi; G. Guillaud; C. Jouve; Roger Lamartine; A. Bouazizi; H. Maaref

Abstract Many investigations on dielectric, electronic and spectroscopic characterisation have been achieved on molecular materials for their eventual application as sensors or electronic devices. Calixarenes exhibit an interesting supramolecular structure on account of their receptor properties; they represent receptor molecules of widely varying size for metal cations and organic molecules. They are comparatively new cyclic condensation products of para-substituted phenols and formaldehyde; they form a series of well-defined cyclic oligomers. Therefore, the variation of cavity size according to the requirements (i.e. ion sensitivities) of different guests is possible. The macro cycles are characterised by the phenolic unit number (4,6,8,…). p -tert-Butyl calix[ n ]arene ( n = 4 and 8), used as a sensitive membrane incorporating the receptor molecule on the top of the gate oxide, was characterised. The calixarene was thermally evaporated on the oxide to form a semiconductor-oxide-film capacitance structure. It is shown, by means of structural and spectroscopic studies, that films have good adherence to the oxide and are chemically very stable allowing the use of such a structure as a chemical sensor in liquid media. The studies of ISFET structure using calix[ n ]arene membranes are in progress, showing an interesting selectivity and stability.


Sensors and Actuators B-chemical | 2000

Cu2+-ISFET type microsensors based on thermally evaporated p-tert-butylcalix[9 and 11]arene thin films1

R. Mlika; I Dumazet; H. Ben Ouada; Nicole Jaffrezic-Renault; R Lamartine; M. Gamoudi; G. Guillaud

Abstract Large size odd-numbered calixarenes were used for the first time as ionophoric agents for the functionalization of ISFET microsensors and EIS structures through thermal evaporation process. Both calixarenes have shown a nernstian sensitivity over three decades towards only copper (II) activities. Very low selectivity coefficients were observed for K + and Ca 2+ whereas Cd 2+ and Pb 2+ (less than 10 −3 ) can be considered as interfering ions. Lifetime of around three months for the microsensors were obtained.


Analytica Chimica Acta | 1997

Membranes Containing New Large Size Calixarenes on Semiconductor Substrates for Chemical Microsensors.

R. Mlika; I Dumazet; M. Gamoudi; R Lamartine; H. Ben Ouada; Nicole Jaffrezic-Renault; G. Guillaud

Abstract New large size calixarenes have been synthesized and tested as ionophores. The applications of these new even-membered macrocycles in the field of chemical sensors have been studied. Thin p-tert-butyl calix[10 and 12]arenes film were deposited using the technique of thermal evaporation under vacuum on ISFET (Ion Sensitive Field Effect Transistor) and EIS structures (Electrolyte Insulator Semiconductor) surfaces. It was verified that by liquid chromatography the calixarene layers, after the sublimation process did not undergo any degradation. Electrochemical measurements with EIS structures and ISFETs were made to test the sensing properties of these calixarene films towards heavy metals. These large size calixarenes have shown a Nernstian sensitivity and a good selectivity towards iron(III) ions for the p-tert-butyl calix[12]arene and silver(I) ions for the p-tert-butyl calix[10]arene. A long lifetime was obtained for these sensors when tested over a large pH range. These materials present a real and great promise for further developments.


Synthetic Metals | 1997

Elaboration of thin films based on p-tert-butyl-calix [8] arene. Application to the chemical sensors type EIS and ISFET

R. Mlika; H. Ben Ouada; M.A. Hamza; M. Gamoudi; G. Guillaud; Nicole Jaffrezic-Renault

Abstract In this paper we report some results about recognition reagents in an EIS (electrolyte—insulator—semiconductor) and ISFET (ion-sensitive field-effect transistor) type sensors, elaborated with a p-tert-butyl-calix [8] arene molecule. This calixarene was deposited by sublimation onto the surface insulator of the samples. Reflexion—adsorption infrared spectroscopy and X-ray diffraction were performed to characterize the chemical properties and the morphology of the layers. Electrochemical measurements were made to study the sensitivity and the selectivity of this sensitive membrane towards earth alkaline cations and the transition metals. A linear sensitivity was obtained only for the Ca2+. These devices exhibit a high chemical stability in liquid media and consequently can be used as sensors.


Thin Solid Films | 1997

Study of the electrical properties of thin film transistors based on nickel phthalocyanine

R. Ben Chaabane; G. Guillaud; M. Gamoudi

Abstract Fabrication and characterization of Schottky gated and metal semiconductor field-effect transistors based on molecular materials have been reported. In this paper, we present results on the transient properties of thin film transistors. The presence of a delay time when drain voltage is applied is studied. A discussion about the functioning principle of this class of devices is presented. Finally, the effect of both environment and different film treatments on the electrical characteristics is also investigated.

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R. Mlika

Centre national de la recherche scientifique

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I Dumazet

Centre national de la recherche scientifique

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R Lamartine

Centre national de la recherche scientifique

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B. François

Centre national de la recherche scientifique

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